Granted Patent B2

US 9,136,116 · App. 13/198,666 · Granted Sep 15, 2015

Abstract

Claims (33)

1. A method of forming a lateral p-n junction in III-nitride materials, the method comprising:

providing an n-type III-nitride substrate;

forming an n-type epitaxial layer coupled to the n-type III-nitride substrate;

forming an etch/regrowth mask coupled to a surface of the n-type III-nitride substrate;

removing at least a portion of the n-type epitaxial layer to define a recessed region;

diffusing an acceptor into the recessed region to form a doped region extending from the recessed region into the substrate, wherein the doped region of the substrate and the substrate adjacent to the doped region collectively form a p-n junction spaced apart from the recessed region and extending along an entire depth of the recessed region;

loading the substrate into an MOCVD reactor;

removing a portion of the doped region using an in-situ etch process to undercut the etch/regrowth mask; and

regrowing a p-type epitaxial layer coupled to the doped region, wherein the surface of the n-type III-nitride substrate is free from the regrown p-type epitaxial layer.

2. The method of claim 1 wherein:

a regrowth interface is defined by the p-type epitaxial layer and the recessed region; and

the p-n junction is spaced apart from the regrowth interface.

3. The method of claim 2 wherein the p-n junction is spaced apart from the regrowth interface by a distance between about 1 nm and about 1 μm.

4. The method of claim 1 wherein the p-n junction is spaced has a depth into the substrate between about 1 nm and about 1 μm.

5. The method of claim 1 wherein the acceptor comprises zinc.

6. The method of claim 1 wherein the acceptor comprises at least one of magnesium, beryllium, or calcium.

7. The method of claim 1 wherein the n-type III-nitride substrate comprises a GaN substrate doped with at least one of silicon or oxygen.

8. The method of claim 1 wherein the p-n junction extends in a direction substantially orthogonal to a growth direction of the III-nitride material having the second conductivity type.

9. A method of forming a lateral p-n junction, the method comprising:

providing a substrate comprising a GaN-based material characterized by a first conductivity type;

forming an etch/regrowth masking layer on a surface of the substrate;

removing a first portion of the substrate using an ex-situ etch process, whereby an etched surface defined by the etch/regrowth masking layer is exposed;

loading the substrate with the etched surface into an MOCVD reactor;

removing an additional portion of the substrate from the etched surface using an in-situ etch process in the MOCVD reactor to undercut the etch/regrowth mask, wherein removing the first and additional portions forms a recessed region in the substrate; and

regrowing a GaN-based material characterized by a second conductivity type in at least a portion of the first portion and the additional portion, wherein the surface of the substrate is free from the regrown GaN-based materials.

10. The method of claim 9 , wherein the substrate comprises a GaN substrate.

11. The method of claim 9 , wherein the first conductivity type comprises an n-type.

12. The method of claim 11 , wherein the second conductivity type comprises a p-type.

13. The method of claim 9 , further comprising:

forming an electrode on a portion of the substrate to provide an electrical connection to the GaN-based material of the first conductivity type; and

forming a second electrode on a portion of the epitaxial layer of the second conductivity type.

14. The method of claim 9 , wherein a width of the first portion is less than a width of the additional portion.

15. The method of claim 9 further comprising, after regrowing the GaN-based material, removing the etch/regrowth masking layer.

Assignments (13)