Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer
View Patent ↗A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials includes providing an n-type GaN-based substrate having a first surface and a second surface. The method also includes forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate, and forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer. The method further includes removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources, and regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer, and p-type material in regions overlying the plurality of dopant sources. The method also includes forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.
1. An MPS diode comprising:
a III-nitride substrate having a first side and a second side opposing the first side, wherein the III-nitride substrate is characterized by a first conductivity type;
a first III-nitride epitaxial layer coupled to the III-nitride substrate and characterized by the first conductivity type;
a plurality of dopant sources coupled to the first III-nitride epitaxial layer and characterized by a second conductivity type;
a second III-nitride epitaxial layer overlying portions of the first III-nitride epitaxial layer and overlying the plurality of dopant sources, wherein the second III-nitride epitaxial layer includes first regions characterized by the first conductivity type and second regions characterized by the second conductivity type; and
a first metallic structure electrically coupled to the second III-nitride epitaxial layer, wherein the first metallic structure comprises Schottky contacts to the first regions and ohmic contacts to the second regions.
2. The MPS diode of claim 1 wherein the plurality of dopant sources comprise III-nitride epitaxial elements.
3. The MPS diode of claim 2 wherein the III-nitride epitaxial elements comprise magnesium doped GaN.
4. The MPS diode of claim 1 wherein the first conductivity type comprises n-type and the second conductivity type comprises p-type.
5. The MPS diode of claim 4 wherein the first regions overlie the portions of the first III-nitride epitaxial layer and the second regions overlie the plurality of dopant sources.
6. The MPS diode of claim 1 further comprising a second metallic structure electrically coupled to the second side of the III-nitride substrate.
7. The MPS diode of claim 1 at least one of the second regions characterized by the second conductivity type is configured to provide edge termination to a semiconductor device.
8. An MPS diode comprising:
a III-nitride substrate;
an n-type III-nitride epitaxial layer coupled to the III-nitride substrate;
a plurality of p-type dopant sources coupled to the n-type III-nitride epitaxial layer, each of the p-type dopant sources having opposing etched surfaces; and
a regrown III-nitride epitaxial layer comprising:
n-type regions coupled to portions of the n-type III-nitride epitaxial layer and the opposing etched surfaces; and
p-type regions coupled to the plurality of p-type dopant sources and interspersed between the n-type regions, wherein a bulk interface is present between adjacent n-type and p-type regions.
9. The MPS diode of claim 8 wherein the etched surfaces are characterized by a first vertical extent and the bulk interfaces are characterized by a second vertical extent greater than the first vertical extent.
10. The MPS diode of claim 8 further comprising a first metallic structure electrically coupled to the regrown III-nitride epitaxial layer and a second metallic substrate electrically coupled to the III-nitride substrate.
11. The MPS diode of claim 10 wherein the first metallic structure comprises Schottky contacts to the n-type regions and ohmic contacts to the p-type regions.
12. The MPS diode of claim 8 wherein the p-type regions comprise epitaxially grown p-type material and regrown p-type material.