Method and system for co-packaging gallium nitride electronics
View Patent ↗An electronic package includes a leadframe, a plurality of pins, a gallium-nitride (GaN) transistor, and a GaN diode. The GaN transistor includes a drain region, a drift region, a source region, and a gate region; the drain region includes a GaN substrate and a drain contact, the drift region includes a first GaN epitaxial layer coupled to the GaN substrate, the source region includes a source contact and is separated from the GaN substrate by the drift region, and the gate region includes a second GaN epitaxial layer and a gate contact. The GaN diode includes an anode region and a cathode region, the cathode region including the GaN substrate and a cathode contact, and the anode region including a third GaN epitaxial layer coupled to the GaN substrate and an anode contact. The drain contact and the anode contact are electrically connected to the leadframe.
1. An electronic package comprising:
a leadframe;
a plurality of pins;
a gallium nitride (GaN) transistor comprising a drain region, a drift region, a source region, and a gate region, wherein:
the drain region comprises a GaN substrate and a drain contact;
the drift region comprises a first GaN epitaxial layer coupled to the GaN substrate;
the source region is separated from the GaN substrate by the drift region and comprises a source contact;
the gate region comprises a second GaN epitaxial layer coupled to the first GaN epitaxial layer and a gate contact;
a GaN diode comprising an anode region and a cathode region, wherein:
the cathode region comprises the GaN substrate and a cathode contact; and
the anode region comprises a third GaN epitaxial layer coupled to the GaN substrate and an anode contact;
wherein the drain contact and the anode contact are electrically connected to the leadframe.
2. The electronic package of claim 1 wherein:
the cathode contact is electrically connected to a first pin of the plurality of pins;
the source contact is electrically connected to a second pin in the plurality of pins; and
the gate contact is electrically connected to a third pin in the plurality of pins.
3. The electronic package of claim 2 wherein:
the electrical connections of the cathode contact, the source contact, and the gate contact comprises at least one of wire bonds, ribbon bonds, or copper clips.
4. The electronic package of claim 3 wherein the electrical connection of the cathode contact is connected to the first pin and an additional one or more pins of the plurality of pins.
5. The electronic package of claim 1 wherein the electrical connection between the drain contact and the leadframe comprises at least one of epoxy, eutectic, sintering, or solder.
6. The electronic package of claim 2 wherein the electrical connection between the anode contact and the leadframe comprises at least one of epoxy, eutectic, sintering, or solder.
7. The electronic package of claim 1 wherein the gallium nitride-based electronics package is electrically coupled and attached to a circuit board, wherein the leadframe is configured to conduct current from the drain region of the GaN transistor and the anode region of the GaN diode directly to the circuit board.
8. The electronic package of claim 1 further comprising one or more heat sinks attached to the leadframe.
9. The electronic package of claim 1 further comprising a solderable metal stack on the drain contact and a bondable metal stack on each of the source contact and gate contact.
10. The electronic package of claim 9 further comprising a second solderable metal stack on the anode contact and a second bondable metal stack on the cathode contact.
11. The electronic package of claim 1 wherein the leadframe comprises a bond pad, and further wherein the drain contact and the anode contact are electrically connected to the leadframe via the bond pad.