Method of fabricating a GaN P-i-N diode using implantation
View Patent ↗A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region
1. A III-nitride semiconductor device, comprising:
a III-nitride substrate of a first conductivity type;
a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, wherein the first III-nitride epitaxial layer is characterized by a first charge density;
a second III-nitride epitaxial layer of a second conductivity type coupled to the first III-nitride epitaxial layer; and
an implanted region in the first III-nitride epitaxial layer, wherein the implanted region of the first III-nitride epitaxial layer is of the first conductivity type, wherein the implanted region of the first III-nitride epitaxial layer is characterized by a second charge density, and wherein the second charge density is lower than the first charge density.
2. The device of claim 1 , wherein the first III-nitride epitaxial layer comprises an n-type GaN epitaxial material.
3. The device of claim 1 , wherein the depth of the implanted region is between 0.1 μm and 1 μm.
4. The device of claim 1 , wherein a width of the implanted region is 0.5 μm or greater.
5. The device of claim 1 , wherein the III-nitride semiconductor device is characterized by a breakdown voltage of 600V or greater.
6. The device of claim 5 , wherein a thickness of the first III-nitride epitaxial layer is between 1μm and 100 μm.
7. The device of claim 1 , further comprising a dielectric layer coupled to the implanted region.
8. The device of claim 7 , further comprising a first metal structure coupled to at least a portion of the dielectric layer.
9. The device of claim 8 , wherein the first metal structure is further coupled to a portion of the implanted region.
10. The device of claim 8 , further comprising a second metal structure coupled to the III-nitride substrate.
11. A III-nitride P-i-N diode, comprising:
a III-nitride substrate of a first conductivity type, wherein the III-nitride substrate forms one of either a cathode or an anode of the P-i-N diode;
a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, wherein the first III-nitride epitaxial layer is characterized by a first charge density;
a second III-nitride epitaxial layer of a second conductivity type coupled to the first III-nitride epitaxial layer, wherein the second III-nitride epitaxial layer forms the other of either the cathode or the anode of the P-i-N diode; and
an implanted region in the first III-nitride epitaxial layer, wherein the implanted region of the first III-nitride epitaxial layer is of the first conductivity type, wherein the implanted region of the first III-nitride epitaxial layer is characterized by a second charge density, and wherein the second charge density is lower than the first charge density.
12. The device of claim 11 , wherein the first III-nitride epitaxial layer comprises an n-type GaN epitaxial material.
13. The device of claim 11 , wherein the depth of the implanted region is between 0.1 μm and 1 m.
14. The device of claim 11 , wherein a width of the implanted region is 0.5 μm or greater.
15. The device of claim 11 , wherein the III-nitride semiconductor device is characterized by a breakdown voltage of 600V or greater.
16. The device of claim 15 , wherein a thickness of the first III-nitride epitaxial layer is between 1 μm and 100 μm.
17. The device of claim 11 , further comprising a dielectric layer coupled to the implanted region.
18. The device of claim 17 , further comprising a first metal structure coupled to at least a portion of the dielectric layer.
19. The device of claim 18 , wherein the first metal structure is further coupled to a portion of the implanted region.
20. The device of claim 18 , further comprising a second metal structure coupled to the III-nitride substrate.