IP Library Granted Patent US 9,515,364
Granted Patent B1
US 9,515,364 · App. 14/563,018 · Granted Dec 6, 2016

Three-dimensional microstructure having a first dielectric element and a second multi-layer metal element configured to define a non-solid volume

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Quick Facts
Patent No.
US 9,515,364
App. No.
14/563,018
Granted
Dec 6, 2016
Kind
B1
Abstract

Provided are three-dimensional microstructures and their methods of formation. The microstructures are formed by a sequential build process and include microstructural elements which are affixed to one another. The microstructures find use, for example, in coaxial transmission lines for electromagnetic energy.

Claims (21)

1. A three-dimensional microstructure, comprising:

a first microstructural element comprising a dielectric material and having an aperture extending at least partially therethrough;

a second microstructural element comprising a plurality of layers of a metal material,

each metal layer disposed on top of and in contact with one another;

a metal material in the aperture affixing the first microstructural element to the second microstructural element; and

a non-solid volume to which the first microstructural element and/or the second microstructural element are exposed.

2. The three-dimensional microstructure of claim 1 , wherein the aperture has vertical sidewalls.

3. The three-dimensional microstructure of claim 1 , wherein the microstructure comprises a coaxial transmission line comprising a center conductor, an outer conductor and a dielectric support member for supporting the center conductor, wherein the dielectric support member is the first microstructural element, and the inner conductor and/or the outer conductor is the second microstructural element.

4. The three-dimensional microstructure of claim 3 , wherein the non-solid volume is under vacuum or in a gas state, and is disposed between the center conductor and the outer conductor.

5. The three-dimensional microstructure of claim 3 , wherein the coaxial transmission line has a generally rectangular coaxial geometry.

6. The three-dimensional microstructure of claim 3 , comprising a plating seed layer disposed over the dielectric support member.

7. The three-dimensional microstructure of claim 1 , wherein the aperture has non-vertical sidewalls.

8. The three-dimensional microstructure of claim 1 , wherein the aperture extends completely through the first microstructural element from a first surface to a second surface thereof.

9. A method of forming a three-dimensional microstructure by a sequential build process, comprising:

disposing a plurality of layers over a substrate, wherein the layers comprise a layer of a dielectric material, a layer of a metal material and a layer of a sacrificial material;

forming a first microstructural element comprising the dielectric material and having an aperture extending at least partially therethrough;

forming a second microstructural element comprising a plurality of layers of the metal material;

depositing a metal material in the aperture, affixing the first microstructural element to the second microstructural element; and

removing the sacrificial material to form a non-solid volume to which the first microstructural element and/or the second microstructural element are exposed.

10. The method of claim 9 , wherein the microstructure comprises a coaxial transmission line comprising a center conductor, an outer conductor and a dielectric support member for supporting the center conductor, wherein the dielectric support member is the first microstructural element, and the inner conductor and/or the outer conductor is the second microstructural element.

11. The three-dimensional microstructure of claim 9 , wherein the metal material of the second microstructural element and the metal material in the aperture are of the same material.

Assignments (6)
CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE INSIDE THE ASSIGNMENT DOCUMENTATION PREVIOUSLY RECORDED AT REEL: 048698 FRAME: 0301. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Apr 10, 2019
From: NUVOTRONICS, INC.
To: CUBIC CORPORATION
Reel/Frame 048843/0801 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2019
From: NUVOTRONICS, INC.
To: CUBIC CORPORATION
Reel/Frame 048698/0301 →
CHANGE OF NAME Recorded Oct 13, 2015
From: NUVOTRONICS, LLC
To: NUVOTRONICS, INC.
Reel/Frame 036851/0027 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 9, 2014
From: ROHM AND HAAS ELECTRONIC MATERIALS LLC
To: NUVOTRONICS, LLC
Reel/Frame 034438/0255 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 9, 2014
From: SHERRER, DAVID W.; HOUCH, WILLIAM D.
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 034438/0278 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 9, 2014
From: SHERRER, DAVID W.; NICHOLS, CHRISTOPHER A.; ZHOU, SHIFANG
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 034440/0647 →