Semiconductor device assembly with package interconnect extending into overlying spacer material, and associated systems, devices, and methods
Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.
1. A semiconductor device assembly, comprising:
an encapsulant that includes an outer surface;
a semiconductor device at least partially encased within the encapsulant and having an active surface;
at least one interconnect attached to the active surface of the semiconductor device, wherein at least a portion of the interconnect extends beyond the outer surface of the encapsulant, and wherein the portion of the interconnect includes a contact surface electrically connected to the active surface of the semiconductor device; and
a spacer material covering the outer surface of the encapsulant and the contact surface of the portion of the interconnect, wherein the spacer material substantially absorbs the interconnect and the interconnect does not puncture the spacer material.
2. The semiconductor device assembly of claim 1 , further comprising:
a bond pad at the active surface of the semiconductor device; and
wherein the interconnect comprises a conductive pillar attached to the bond pad.
3. The semiconductor device assembly of claim 2 wherein the conductive pillar has substantially straight sidewalls.
4. The semiconductor device assembly of claim 2 wherein the conductive pillar has a cylindrical shape.
5. The semiconductor device assembly of claim 2 wherein the conductive pillar has a truncated conical shape.
6. The semiconductor device assembly of claim 2 , further comprising:
a redistribution network at the active surface of the semiconductor device, wherein the redistribution network is electrically coupled to the bond pad; and
at least one wirebond electrically coupled to the redistribution network.
7. The semiconductor device assembly of claim 2 wherein the active surface of the semiconductor device further comprises a first active surface, and wherein the semiconductor device further comprises a semiconductor die having a second active surface that includes the first active surface of the semiconductor device, and wherein the semiconductor device assembly further comprises:
a support substrate;
at least one wirebond coupling the second active surface of the semiconductor die to a bond pad at the support substrate.
8. The semiconductor device assembly of claim 7 wherein the semiconductor die further comprises a first semiconductor die, and wherein the semiconductor device assembly further comprises a second semiconductor die between the first semiconductor die and the support substrate.
9. The semiconductor device assembly of claim 1 wherein the semiconductor device comprises a memory die.
10. A semiconductor device assembly, comprising:
a semiconductor device having a bond pad;
an encapsulant at least partially encasing the semiconductor device and the bond pad, the encapsulant having an outer surface;
a conductive pillar electrically coupled to the bond pad of the semiconductor device, the conductive pillar including (1) a first portion below the outer surface of the encapsulant and projecting from the bond pad and (2) a second portion projecting from the first portion and beyond the outer surface of the encapsulant; and
a spacer material covering the outer surface of the encapsulant and the second portion of the conductive pillar, wherein the spacer material substantially absorbs the conductive pillar and is not punctured by the conductive pillar.
11. The semiconductor device assembly of claim 10 wherein the conductive pillar is a homogenous structure.
12. The semiconductor device assembly of claim 10 wherein the first portion of the conductive pillar has a first diameter, and the second portion of the conductive pillar has a second diameter that is larger than the first diameter of the first portion.