High-stability polyurethane polishing pad
View Patent ↗The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad is a cast polyurethane polymeric matrix formed from an isocyanate-terminated molecule and a curative agent. The cast polyurethane polymeric matrix contains 4.2 to 7.5 weight percent fluid-filled microspheres in the isocyanate-terminated molecule. The fluid-filled-microspheres is polymeric and has an average diameter of 10 to 80 μm and the polishing pad having a conditioner sensitivity (CS) of 0 to 2.6.
1. A polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates, the polishing pad consisting of a cast polyurethane polymeric matrix and fluid-filled microspheres, the polyurethane polymeric matrix formed from an isocyanate-terminated molecule and a curative agent, the isocyanate-terminated molecule being H 12 MDI/TDI with polytetramethylene ether glycol (PTMEG) having an unreacted NCO of 8.95 to 9.25 wt % and the curative agent being a blend of 4,4′-methylene-bis(2-chloroaniline) (MbOCA) and a curative having six hydroxyl functionalities, the cast polyurethane polymeric matrix containing 5 to 7.5 weight percent of the fluid-filled microspheres in the isocyanate-terminated molecule, the fluid-filled-microspheres being from a 1/1 to 1/4 weight ratio blend of polymeric unexpanded to pre-expanded microspheres, having a maximum expansion 145% to 308% as measured with thermomechanical analysis using a ceramic cup having an inside diameter of 7.54 mm, an outside diameter of 6.6 mm and a preload of 0.06 N downforce ramped from 30° C. to 250° C. at 3° C. per minute and having an average diameter of 20 to 60 μm, the fluid-filled polymeric microspheres in the polishing pad having a diameter that is less than that achieved from the T max temperature in air and having a semi-hemispherical shape when cut open and viewed with an SEM and the polishing pad having a final density of 0.5 to 0.65 g/cm 3 and a conditioner sensitivity (CS) of 0 to 2.6 with CS defined as follows:
CS
=
RR
75
%
In
-
situ
Conditioning
-
RR
50
%
In
-
situ
Conditioning
RR
50
%
In
-
situ
Conditioning
where CS is defined as blanket TEOS removal rate difference at 75% in-situ conditioning (RR 75% In-situ Conditioning ) and blanket TEOS removal rate at 50% in-situ conditioning (RR 50% In-situ Conditioning ) divided by the blanket TEOS removal rate at 50% partial in-situ conditioning using a fumed silica slurry having a 0.1 μm average particle size at a 12.5 wt % concentration with a pH of 10.5 and a diamond conditioner with a 150 μm average particle size, a 400 μm pitch and a 100 μm protrusion at a conditioner downforce of 9 lbs (or 4.08 Kg).