Topcoat compositions and photolithographic methods
Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I), wherein R1 and R2 are alkyl groups of 3-8 carbons and the total number of carbons of R1 and R2 is greater than 6; and 2) a second organic solvent that is a C4 to C10 monovalent alcohol.
1. A method of forming a photolithographic pattern, comprising:
(a) applying a photoresist layer over a substrate;
(b) applying over the photoresist composition layer a layer of a topcoat composition;
(c) exposing the photoresist layer to actinic radiation; and
(d) contacting the exposed photoresist layer with a developer to form a photoresist pattern,
wherein the topcoat composition comprises 1) a polymer system and 2) a solvent system, the solvent system comprising:
(i) a first organic solvent that comprises propyl pentanoate, isopropyl pentanoate, isopropyl 3-methylbutanoate, isopropyl 2-methylbutanoate, isopropyl pivalate, isobutyl isobutyrate, 2-methylbutyl isobutyrate, 2-methylbutyl 2-methylbutanoate, 2-methylbutyl 2-methylhexanoate, 2-methylbutyl heptanoate, hexyl heptanoate, n-butyl n-butyrate, isoamyl n-butyrate, or isoamyl isovalerate; and
(ii) a second organic solvent that comprises n-butanol, isobutanol, 2-methyl-1-butanol, isopentanol, 2,3-dim ethyl-1-butanol, 4-methyl-2-pentanol, isohexanol, or isoheptanol, isomers thereof or mixtures thereof,
wherein the first solvent is present in the composition in an amount of 20 to 30 wt %, based on weight of the solvent system.
2. The method of claim 1 wherein the second solvent is present in the composition in an amount of 30 to 80 wt %, based on weight of the solvent system.
3. A method of forming a photolithographic pattern, comprising:
(a) applying a photoresist layer over a substrate;
(b) applying over the photoresist composition layer a layer of a topcoat composition;
(c) exposing the photoresist layer to actinic radiation; and
(d) contacting the exposed photoresist layer with a developer to form a photoresist pattern,
wherein the topcoat composition comprises: 1) a polymer system that comprises three different polymers, wherein the polymer system of the topcoat composition comprises a matrix polymer and a surface active polymer, wherein the matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and wherein the surface active polymer has a lower surface energy than a surface energy of the matrix polymers and 2) a solvent system, the solvent system comprising:
(i) a first organic solvent that comprises n-butyl n-butyrate, isoamyl n-butyrate, or isoamyl isovalerate,
wherein the first solvent is present in the composition in an amount of 20 to 30 wt %, based on weight of the solvent system; and
(ii) a second organic solvent is 4-methyl-2-pentanol,
wherein the second solvent is present in the composition in an amount of 30 to 80 wt %, based on weight of the solvent system.
4. The method of claim 3 wherein the polymer system of the topcoat composition comprises a matrix polymer and a surface active polymer, wherein the matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and wherein the surface active polymer has a lower surface energy than a surface energy of the matrix polymer.