Memory cells with p-type diffusion read-only port
A memory cell includes a bistable element and two p-channel transistors (i.e., first and second p-channel transistors). The bistable element includes a plurality of inverting circuits and at least one data storage node. The bistable element may be formed in a first region on the substrate that is partially formed by a p-type diffusion region and an n-type diffusion region. The first and second p-channel transistors are coupled serially. The first p-channel transistor may also have its gate terminal coupled to the at least one data storage node of the bistable element. A method of manufacturing the memory cell includes forming a bistable element having at least first and second data storage nodes, forming a write-only port of the memory cell over an n-type diffusion region and forming a read-only port of the memory cell over a p-type diffusion region.
1. A memory cell, comprising:
a bistable element that includes a plurality of inverting circuits and that includes at least one data storage node, wherein the plurality of inverting circuits includes pull-up transistors; and
first and second p-channel transistors that are coupled in series, wherein the first p-channel transistor has a gate terminal that is coupled to the at least one data storage node of the bistable element, wherein the first and second p-channel transistors have a first threshold voltage, and wherein the pull-up transistors of the bistable element have a second threshold voltage that is different than the first threshold voltage.
2. The memory cell as defined in claim 1 , further comprising:
a power supply line, wherein the first p-channel transistor has a source terminal that is coupled to the power supply line.
3. The memory cell as defined in claim 1 , further comprising:
a read word line; and
a read data line, wherein the second p-channel transistor has a gate terminal that is coupled to the read word line and a drain terminal that is coupled to a read bit line.
4. The memory cell as defined in claim 1 , further comprising:
first and second n-channel transistors, wherein the first n-channel transistor is coupled to the at least one data storage node, and wherein the second n-channel transistor is coupled to another data storage node of the bistable element.
5. The memory cell as defined in claim 4 , further comprising:
a write word line that is coupled to gate terminals of the first and second n-channel transistors;
a write bit line that is coupled to a source-drain terminal of the first n-channel transistor; and
a write bit line bar that is coupled to a source-drain terminal of the second n-channel transistor.
6. The memory cell as defined in claim 1 , wherein the first threshold voltage of the first and second p-channel transistors is in a range of zero volts (V) to −0.4 V.
7. The memory cell as defined in claim 1 , wherein the memory cell is a part of an array of memory cells, of which a region defining the array of memory cells does not include dummy structures.
8. The memory cell as defined in claim 1 , wherein the memory cell forms part of a configuration memory of a programmable integrated circuit.
9. A memory cell formed on a semiconductor substrate, comprising:
a bistable element formed in a first region on the substrate comprising partially of a p-type diffusion region and an n-type diffusion region;
a read circuit that is coupled to the bistable element and that is formed in a second region on the substrate, wherein the second region comprises an additional p-type diffusion region; and
a write circuit that is coupled to the bistable element and that is formed within the n-type diffusion region, wherein the n-type diffusion region is physically interposed between the p-type diffusion region in the first region and the additional p-type diffusion region in the second region.
10. The memory cell as defined in claim 9 , wherein the write circuit comprises an n-channel transistor.
11. The memory cell as defined in claim 9 , wherein a ratio of the p-type diffusion region over a total area of the memory cell first, is greater than a predefined ratio.
12. The memory cell as defined in claim 11 , wherein the predefined ratio is in a range of 0.04 to 0.22.
13. The memory cell as defined in claim 9 , wherein the read circuit comprises:
two p-channel transistors, of which one of the p-channel transistors has a gate terminal coupled to one of two data storage nodes of the bistable element.
14. The memory cell as defined in claim 13 , wherein the p-channel transistors comprises a threshold voltage of less than −0.4 volts.
15. A method of manufacturing a memory cell, comprising:
forming a bistable element having at least first and second data storage nodes;
forming a write port using only n-type metal oxide semiconductor (NMOS) transistors; and
forming a read port using only p-type metal oxide semiconductor (PMOS) transistors, wherein a ratio of a region in which the PMOS transistors are formed to a total region of the memory cell is greater than a predefined ratio, and wherein the predefined ratio has a range that is between 0.04 and 0.22.
16. The method as described in claim 15 , wherein forming the write port comprises:
forming a first NMOS pass-gate transistor that is coupled to the first data storage node; and
forming a second NMOS pass-gate transistor that is coupled to the second data storage node.
17. The method as described in claim 15 , wherein forming the read port comprises:
forming a first PMOS read port transistor that has a gate terminal that is coupled to the first data storage node; and
forming a second PMOS read port transistor in series with the first PMOS read port transistor, wherein the second PMOS read port transistor has a gate terminal that is coupled to a read word line.