IP Library Granted Patent US 9,394,411
Granted Patent B2
US 9,394,411 · App. 14/580,300 · Granted Jul 19, 2016

Methods for annealing block copolymers and articles manufactured therefrom

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Quick Facts
Patent No.
US 9,394,411
App. No.
14/580,300
Granted
Jul 19, 2016
Kind
B2
Abstract

Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring; a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and the second block is 0.03 to 0.18 at a temperature of 200° C. Disclosed herein is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing a siloxane monomer; and where the block copolymer has a chi parameter of 0.03 to 0.18 at a temperature of 200° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer.

Claims (20)

1. A block copolymer comprising:

a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring;

a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and the second block is 0.03 to 0.18 at a temperature of 200° C.

2. The block copolymer of claim 1 , where the vinyl aromatic monomer is an alkylstyrene.

3. The block copolymer of claim 2 , where the alkylstyrene is o-methylstyrene, p-methylstyrene, m-methylstyrene, o-ethylstyrene, m-ethylstyrene, p-ethylstyrene, α-methyl-p-methylstyrene, 2,4-dimethylstyrene, iso-propyl styrene, propyl styrene, butyl styrene, tert-butylstyrene, sec-butylstyrene, isobutylstyrene, 4-tert-butylstyrene, or a combination comprising at least one of the foregoing alkylstyrenes.

4. The block copolymer of claim 1 , where the first block comprises poly(4-tertbutyl styrene) and has a molecular weight of 2,000 to 200,000 grams per mole.

5. The block copolymer of claim 1 , where the siloxane monomer has a structure represented by formula (1)

wherein each R is independently a C 1 -C 10 alkyl, a C 3 -C 10 cycloalkyl, a C 6 -C 14 aryl, a C 7 -C 13 alkylaryl or a C 7 -C 13 arylalkyl and where a degree of polymerization n in the formula (1) is to 5,000.

6. The block copolymer of claim 1 , where the second block comprises polydimethylsiloxane.

7. The block copolymer of claim 1 , where the block copolymer comprises cylindrical and/or lamellar domains and has an interdomain spacing of less than or equal to about 50 nanometers.

8. The block copolymer of claim 1 , where the block copolymer is annealed to a temperature of up to 400° C. for up to 4 hours.

9. The block copolymer of claim 1 , where the block copolymer is annealed to a temperature of 270 to 330° C. for 0.5 minutes to 2 hours.

10. An article formed from the block copolymer of claim 1 .

11. A method comprising:

polymerizing a vinyl aromatic monomer to form a first block, wherein the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring; and

polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing a siloxane monomer; and where the block copolymer has a chi parameter of 0.03 to 0.18 at a temperature of 200° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer.

12. The method of claim 11 , where the first block is anionically polymerized.

13. The method of claim 12 , where the second block is polymerized by condensation polymerization.

14. The method of claim 11 , further comprising disposing the block copolymer on a substrate.

15. The method of claim 11 , further comprising annealing the block copolymer on a substrate; where the annealing is conducted at a temperature of up to 400° C. for up to 4 hours.

Assignments (7)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF LEGAL ENTITY Recorded Sep 17, 2024
From: DDP SPECIALTY ELECTRONIC MATERIALS US, INC
To: DDP SPECIALTY ELECTRONIC MATERIALS US, LLC
Reel/Frame 068972/0210 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2024
From: DOW GLOBAL TECHNOLOGIES LLC
To: THE DOW CHEMICAL COMPANY
Reel/Frame 068971/0226 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2024
From: THE DOW CHEMICAL COMPANY
To: DDP SPECIALTY ELECTRONIC MATERIALS US, INC
Reel/Frame 068971/0362 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2016
From: KRAMER, JOHN W.; VOGEL, ERIN B.; HUSTAD, PHILLIP D.
To: DOW GLOBAL TECHNOLOGIES LLC
Reel/Frame 039062/0199 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2016
From: CHANG, SHIH-WEI; PARK, JONG KEUN; TREFONAS, PETER, III
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 039062/0248 →