Manufacturing method of oxide semiconductor
A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.
1. A method of forming an oxide semiconductor, comprising a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which a target, the substrate facing a surface of the target, and a magnet unit are provided,
wherein the target contains indium, zinc, oxygen, and one of aluminum, gallium, yttrium, and tin,
wherein the magnet unit comprises magnets on a rear surface side of the target,
wherein the deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm, and
wherein the oxide semiconductor has an electron carrier density lower than 8 ×10 11 cm −3 .
2. The method according to claim 1 , wherein the plane is parallel to a rear surface of the target.
3. The method according to claim 1 , wherein a purity of the target is higher than or equal to 99.9 wt %.
4. The method according to claim 1 , wherein a surface temperature of the substrate is higher than or equal to 100° C. and lower than or equal to 450° C.
5. The method according to claim 1 , wherein a vertical distance between the target and the substrate is greater than or equal to 10 mm and less than or equal to 600 mm.
6. The method according to claim 1 , wherein the maximum intensity of the horizontal magnetic field is greater than or equal to 450 G and less than or equal to 700 G.
7. The method according to claim 1 , wherein the target contains indium, zinc, oxygen, and gallium.
8. A method for forming a semiconductor device, comprising steps of:
forming the oxide semiconductor layer by the method according to claim 1 ; and
forming a conductive layer electrically connected to the oxide semiconductor layer.
9. A method of forming an oxide semiconductor, comprising a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which a target and the substrate facing a surface of the target are provided,
wherein the target contains indium, zinc, oxygen, one of aluminum, gallium, yttrium, and tin,
wherein a maximum intensity of a horizontal magnetic field in the surface of the target is greater than or equal to 40 G and less than or equal to 800 G, and
wherein the oxide semiconductor has an electron carrier density lower than 8×10 11 cm −3 .
10. The method according to claim 9 , wherein a purity of the target is higher than or equal to 99.9 wt %.
11. The method according to claim 9 , wherein a surface temperature of the substrate is higher than or equal to 100° C. and lower than or equal to 450° C.
12. The method according to claim 9 , wherein a vertical distance between the target and the substrate is greater than or equal to 10 mm and less than or equal to 600 mm.
13. The method according to claim 9 , wherein the maximum intensity of the horizontal magnetic field in the surface of the target is greater than or equal to 50 G and less than or equal to 350 G.
14. The method according to claim 9 , wherein the target contains indium, zinc, oxygen, and gallium.
15. A method for forming a semiconductor device, comprising steps of:
forming the oxide semiconductor layer by the method according to claim 9 ; and
forming a conductive layer electrically connected to the oxide semiconductor layer.
16. The method according to claim 1 , wherein the plane is located between the target and the magnets.
17. The method according to claim 1 , wherein the oxide semiconductor has a c-axis aligned crystal structure.
18. The method according to claim 1 , wherein density of the oxide semiconductor is higher than or equal to 92.3% and lower than 100% of density of single crystal oxide semiconductor having the same composition.
19. A method of forming an oxide semiconductor, comprising a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which a target and the substrate facing a surface of the target are provided,
wherein the target contains indium, zinc, oxygen, one of aluminum, gallium, yttrium, and tin,
wherein a maximum intensity of a horizontal magnetic field in the surface of the target is greater than or equal to 40 G and less than or equal to 800 G, and
wherein the oxide semiconductor has a majority carrier density lower than 8×10 11 cm −3 .