Granted Patent B2

US 12,446,302 · App. 18/519,200 · Granted Oct 14, 2025

Inventors: Tetsuhiro Tanaka (Kiyose, JP); Yutaka Okazaki (Isehara, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H10D84/813H01G4/008H01G4/105H01G4/40H05K1/18H10D1/66H10D30/021H10D30/6734H10D30/6755H10D30/6757H10D86/423H10D86/481H10D86/60H05K2201/10015H05K2201/10083H05K2201/10166H10B41/70H10D84/08H10D84/811H10D88/00

Abstract

Claims (69)

1. A semiconductor device comprising:

a first transistor comprising silicon in a channel formation region;

a second transistor comprising an oxide semiconductor in a channel formation region; and

a capacitor,

wherein a gate electrode of the first transistor, one of a source region and a drain region of the second transistor, and one electrode of the capacitor are electrically connected to one another,

wherein the semiconductor device further comprises:

a first insulating layer over the channel formation region of the first transistor;

a first conductive layer in direct contact with a top surface of the first insulating layer and serving as a first gate electrode of the second transistor;

a second conductive layer in direct contact with the top surface of the first insulating layer and comprising a same material as the first conductive layer;

an oxide semiconductor layer over the first conductive layer and comprising the channel formation region of the second transistor;

a third conductive layer over the oxide semiconductor layer and serving as a second gate electrode of the second transistor;

a second insulating layer over the third conductive layer;

a fourth conductive layer in direct contact with a top surface of the second insulating layer and electrically connected to the one of the source region and the drain region of the second transistor and to the gate electrode of the first transistor;

a fifth conductive layer in direct contact with the top surface of the second insulating layer and electrically connected to the other of the source region and the drain region of the second transistor and to one of a source region and a drain region of the first transistor;

a sixth conductive layer in direct contact with the top surface of the second insulating layer and electrically connected to the second conductive layer;

a third insulating layer in direct contact with a top surface of the fourth conductive layer, a top surface of the fifth conductive layer, and a top surface of the sixth conductive layer; and

a seventh conductive layer over the third insulating layer,

wherein the fourth conductive layer, the fifth conductive layer, and the sixth conductive layer comprise a same material, and

wherein the seventh conductive layer is electrically connected to the second conductive layer through the sixth conductive layer.

2. The semiconductor device according to claim 1 , further comprising an eighth conductive layer,

wherein the eighth conductive layer is in direct contact with the top surface of the second insulating layer, comprises the same material as the fourth conductive layer, the fifth conductive layer, the sixth conductive layer, and overlaps with the channel formation region of the second transistor.

3. A semiconductor device comprising:

a first transistor comprising silicon in a channel formation region;

a second transistor comprising an oxide semiconductor in a channel formation region; and

a capacitor,

wherein a gate electrode of the first transistor, one of a source region and a drain region of the second transistor, and one electrode of the capacitor are electrically connected to one another,

wherein the semiconductor device further comprises:

a first insulating layer over the channel formation region of the first transistor;

a first conductive layer in direct contact with a top surface of the first insulating layer and serving as a first gate electrode of the second transistor;

a second conductive layer in direct contact with the top surface of the first insulating layer and comprising a same material as the first conductive layer;

an oxide semiconductor layer over the first conductive layer and comprising the channel formation region of the second transistor;

a third conductive layer over the oxide semiconductor layer and serving as a second gate electrode of the second transistor;

a second insulating layer over the third conductive layer;

a fourth conductive layer in direct contact with a top surface of the second insulating layer and electrically connected to the one of the source region and the drain region of the second transistor and to the gate electrode of the first transistor;

a fifth conductive layer in direct contact with the top surface of the second insulating layer and electrically connected to the other of the source region and the drain region of the second transistor and to one of a source region and a drain region of the first transistor;

a sixth conductive layer in direct contact with the top surface of the second insulating layer and electrically connected to the second conductive layer;

a third insulating layer in direct contact with a top surface of the fourth conductive layer, a top surface of the fifth conductive layer, and a top surface of the sixth conductive layer; and

a seventh conductive layer over the third insulating layer,

wherein the fourth conductive layer, the fifth conductive layer, and the sixth conductive layer comprise a same material,

wherein the seventh conductive layer is electrically connected to the second conductive layer through the sixth conductive layer, and

wherein the first conductive layer and the third conductive layer are electrically connected to each other.

4. The semiconductor device according to claim 3 , further comprising an eighth conductive layer,

wherein the eighth conductive layer is in direct contact with the top surface of the second insulating layer, comprises the same material as the fourth conductive layer, the fifth conductive layer, the sixth conductive layer, and overlaps with the channel formation region of the second transistor.

5. A semiconductor device comprising:

a first transistor comprising silicon in a channel formation region;

a second transistor comprising an oxide semiconductor in a channel formation region; and

a capacitor,

wherein a gate electrode of the first transistor, one of a source region and a drain region of the second transistor, and one electrode of the capacitor are electrically connected to one another,

wherein the semiconductor device further comprises:

a first insulating layer over the channel formation region of the first transistor;

a first conductive layer in direct contact with a top surface of the first insulating layer and serving as a first gate electrode of the second transistor;

a second conductive layer in direct contact with the top surface of the first insulating layer and comprising a same material as the first conductive layer;

a second insulating layer in direct contact with a top surface of the first conductive layer and a top surface of the second conductive layer and serving as a first gate insulating layer of the second transistor;

an oxide semiconductor layer over the second insulating layer and comprising the channel formation region of the second transistor;

a third insulating layer in direct contact with a top surface of the oxide semiconductor layer and serving as a second gate insulating layer of the second transistor;

a third conductive layer over the third insulating layer and serving as a second gate electrode of the second transistor;

a fourth insulating layer over the third conductive layer;

a fourth conductive layer in direct contact with a top surface of the fourth insulating layer and electrically connected to the one of the source region and the drain region of the second transistor through a first opening and to the gate electrode of the first transistor through a second opening;

a fifth conductive layer in direct contact with the top surface of the fourth insulating layer and electrically connected to the other of the source region and the drain region of the second transistor and to one of a source region and a drain region of the first transistor;

a sixth conductive layer in direct contact with the top surface of the fourth insulating layer and electrically connected to the second conductive layer;

a fifth insulating layer in direct contact with a top surface of the fourth conductive layer, a top surface of the fifth conductive layer, and a top surface of the sixth conductive layer; and

a seventh conductive layer over the fifth insulating layer,

wherein the first opening is in the third insulating layer and the fourth insulating layer,

wherein the second opening is in the second insulating layer, the third insulating layer, and the fourth insulating layer,

wherein the first opening and the second opening do not overlap with each other,

wherein the fourth conductive layer, the fifth conductive layer, and the sixth conductive layer comprise a same material, and

wherein the seventh conductive layer is electrically connected to the second conductive layer through the sixth conductive layer.

6. The semiconductor device according to claim 5 , further comprising an eighth conductive layer,

wherein the eighth conductive layer is in direct contact with the top surface of the fourth insulating layer, comprises the same material as the fourth conductive layer, the fifth conductive layer, the sixth conductive layer, and overlaps with the channel formation region of the second transistor.

Priority Claims (1)

Continuity (4)

References Cited (101)