Film and light-emitting device
It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 μm to 200 μm inclusive. Further, an electronic device using the flexible light-emitting device is provided.
1. A film comprising:
a first silicon oxynitride layer;
a silicon nitride layer over the first silicon oxynitride layer;
a second silicon oxynitride layer over the silicon nitride layer;
an insulating layer over the second silicon oxynitride layer, the insulating layer comprising nitrogen and silicon; and
a third silicon oxynitride layer over the insulating layer.
2. The film according to claim 1 , wherein the film is a protective film.
3. The film according to claim 1 ,
wherein a thickness of the insulating layer is thinner than a thickness of the first silicon oxynitride layer,
wherein the thickness of the insulating layer is thinner than a thickness of the silicon nitride layer, and
wherein the thickness of the insulating layer is thinner than a thickness of the second silicon oxynitride layer.
4. The film according to claim 1 , wherein the insulating layer is a silicon nitride oxide layer.
5. The film according to claim 1 ,
wherein the first silicon oxynitride layer comprises silicon, and oxygen content in the first silicon oxynitride layer is larger than nitrogen content in the first silicon oxynitride layer,
wherein the silicon nitride layer comprises silicon nitride,
wherein the second silicon oxynitride layer comprises silicon, and oxygen content in the second silicon oxynitride layer is larger than nitrogen content in the second silicon oxynitride layer,
wherein the insulating layer comprises silicon, and nitrogen content in the insulating layer is larger than oxygen content in the insulating layer, and
wherein the third silicon oxynitride layer comprises silicon, and oxygen content in the third silicon oxynitride layer is larger than nitrogen content in the fifth layer third silicon oxynitride layer.
6. The film according to claim 5 , wherein the film is a protective film.
7. The film according to claim 5 ,
wherein a thickness of the insulating layer is thinner than a thickness of the first silicon oxynitride layer,
wherein the thickness of the insulating layer is thinner than a thickness of the silicon nitride layer, and wherein the thickness of the insulating layer is thinner than a thickness of the second silicon oxynitride layer.
8. The film according to claim 5 , wherein the insulating layer is a silicon nitride oxide layer.
9. A light-emitting device comprising:
a flexible substrate;
a light-emitting element;
a film between the flexible substrate and the light-emitting element,
wherein the film comprises:
a first silicon oxynitride layer;
a silicon nitride layer over the first silicon oxynitride layer;
a second silicon oxynitride layer over the silicon nitride layer;
an insulating layer over the second silicon oxynitride layer, the insulating layer comprising nitrogen and silicon; and
a third silicon oxynitride layer over the insulating layer, and wherein the light-emitting device is flexible.
10. The light-emitting device according to claim 9 , further comprising a metal substrate,
wherein each of the light-emitting element and the film is located between the flexible substrate and the metal substrate.
11. The light-emitting device according to claim 9 , further comprising an adhesive between the flexible substrate and the film.
12. The light-emitting device according to claim 9 , further comprising a transistor electrically connected to the light-emitting element.
13. The light-emitting device according to claim 9 , wherein the film is a protective film.
14. The light-emitting device according to claim 9 ,
wherein a thickness of the insulating layer is thinner than a thickness of the first silicon oxynitride layer,
wherein the thickness of the insulating layer is thinner than a thickness of the silicon nitride layer, and
wherein the thickness of the insulating layer is thinner than a thickness of the second silicon oxynitride layer.
15. The light-emitting device according to claim 9 , wherein the insulating layer is a silicon nitride oxide layer.
16. The light-emitting device according to claim 9 ,
wherein the first silicon oxynitride layer comprises silicon, and oxygen content in the first silicon oxynitride layer is larger than nitrogen content in the first silicon oxynitride layer,
wherein the silicon nitride layer comprises silicon nitride,
wherein the second silicon oxynitride layer comprises silicon, and oxygen content in the second silicon oxynitride layer is larger than nitrogen content in the second silicon oxynitride layer,
wherein the insulating layer comprises silicon, and nitrogen content in the insulating layer is larger than oxygen content in the insulating layer, and
wherein the third silicon oxynitride layer comprises silicon, and oxygen content in the third silicon oxynitride layer is larger than nitrogen content in the third silicon oxynitride layer.
17. The light-emitting device according to claim 16 , further comprising a metal substrate,
wherein each of the light-emitting element and the film is located between the flexible substrate and the metal substrate.
18. The light-emitting device according to claim 16 , further comprising an adhesive between the flexible substrate and the film.
19. The light-emitting device according to claim 16 , further comprising a transistor electrically connected to the light-emitting element.
20. The light-emitting device according to claim 16 , wherein the film is a protective film.
21. The light-emitting device according to claim 16 ,
wherein a thickness of the insulating layer is thinner than a thickness of the first silicon oxynitride layer,
wherein the thickness of the insulating layer is thinner than a thickness of the silicon nitride layer, and
wherein the thickness of the insulating layer is thinner than a thickness of the second silicon oxynitride layer.
22. The light-emitting device according to claim 16 , wherein the insulating layer is a silicon nitride oxide layer.