Method for manufacturing semiconductor device
A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.
1. A semiconductor device comprising:
a substrate; and
a transistor over the substrate, the transistor comprising:
a first oxide semiconductor layer;
a second oxide semiconductor layer over the first oxide semiconductor layer, the second oxide semiconductor layer comprising a crystalline region;
a third oxide semiconductor layer over the second oxide semiconductor layer;
a gate insulating film over the third oxide semiconductor layer;
a gate electrode over the gate insulating film;
a source electrode over and in direct contact with the second oxide semiconductor layer; and
a drain electrode over and in direct contact with the second oxide semiconductor layer,
wherein the crystalline region comprises a crystal structure in which a c-axis is substantially perpendicular to a surface of the second oxide semiconductor layer.
2. The semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are in direct contact with a top surface of the second oxide semiconductor layer.
3. The semiconductor device according to claim 1 , further comprising a first transistor below the transistor, wherein a channel of the first transistor comprises silicon.
4. The semiconductor device according to claim 1 , further comprising an aluminum oxide layer over and in contact with the transistor.
5. The semiconductor device according to claim 1 ,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises zinc, and
wherein a component ratio of zinc in the first oxide semiconductor layer is different from a component ratio of zinc in the second oxide semiconductor layer.
6. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor layer and the third oxide semiconductor layer comprises at least one of indium, gallium, tin, aluminum, magnesium, and zinc.
7. The semiconductor device according to claim 1 , wherein each of the source electrode and the drain electrode comprises copper.
8. A semiconductor device comprising:
a substrate; and
a transistor over the substrate, the transistor comprising:
a first oxide semiconductor layer;
a second oxide semiconductor layer over the first oxide semiconductor layer, the second oxide semiconductor layer comprising a crystalline region;
a third oxide semiconductor layer over the second oxide semiconductor layer;
a gate insulating film over the third oxide semiconductor layer;
a gate electrode over the gate insulating film;
a source electrode over and in direct contact with the second oxide semiconductor layer; and
a drain electrode over and in direct contact with the second oxide semiconductor layer,
wherein the gate electrode and the source electrode overlap each other,
wherein the gate electrode and the drain electrode overlap each other, and
wherein the crystalline region comprises a crystal structure in which a c-axis is substantially perpendicular to a surface of the second oxide semiconductor layer.
9. The semiconductor device according to claim 8 , wherein the source electrode and the drain electrode are in direct contact with a top surface of the second oxide semiconductor layer.
10. The semiconductor device according to claim 8 , further comprising a first transistor below the transistor, wherein a channel of the first transistor comprises silicon.
11. The semiconductor device according to claim 8 , further comprising an aluminum oxide layer over and in contact with the transistor.
12. The semiconductor device according to claim 8 ,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises zinc, and
wherein a component ratio of zinc in the first oxide semiconductor layer is different from a component ratio of zinc in the second oxide semiconductor layer.
13. The semiconductor device according to claim 8 ,
wherein each of the first oxide semiconductor layer and the third oxide semiconductor layer comprises at least one of indium, gallium, tin, aluminum, magnesium, and zinc.
14. The semiconductor device according to claim 8 , wherein each of the source electrode and the drain electrode comprises copper.
15. The semiconductor device according to claim 1 , wherein the third oxide semiconductor layer is in direct contact with a bottom surface of the source electrode and a bottom surface of the drain electrode.
16. The semiconductor device according to claim 8 , wherein the third oxide semiconductor layer is in direct contact with a bottom surface of the source electrode and a bottom surface of the drain electrode.
17. A semiconductor device comprising:
a substrate; and
a transistor over the substrate, the transistor comprising:
a first oxide semiconductor layer;
a second oxide semiconductor layer over the first oxide semiconductor layer, the second oxide semiconductor layer comprising a crystalline region;
a third oxide semiconductor layer over the second oxide semiconductor layer;
a gate insulating film over the third oxide semiconductor layer;
a gate electrode over the gate insulating film;
a source electrode over and in direct contact with the second oxide semiconductor layer; and
a drain electrode over and in direct contact with the second oxide semiconductor layer,
wherein a channel formation region of the transistor is provided between the source electrode and the drain electrode,
wherein a stack of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises the channel formation region, and
wherein the crystalline region comprises a crystal structure in which a c-axis is substantially perpendicular to a surface of the second oxide semiconductor layer.
18. The semiconductor device according to claim 17 , wherein the source electrode and the drain electrode are in direct contact with a top surface of the second oxide semiconductor layer.
19. The semiconductor device according to claim 17 , further comprising a first transistor below the transistor, wherein a channel of the first transistor comprises silicon.
20. The semiconductor device according to claim 17 , further comprising an aluminum oxide layer over and in contact with the transistor.
21. The semiconductor device according to claim 17 ,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises zinc, and
wherein a component ratio of zinc in the first oxide semiconductor layer is different from a component ratio of zinc in the second oxide semiconductor layer.
22. The semiconductor device according to claim 17 , wherein each of the first oxide semiconductor layer and the third oxide semiconductor layer comprises at least one of indium, gallium, tin, aluminum, magnesium, and zinc.
23. The semiconductor device according to claim 17 , wherein each of the source electrode and the drain electrode comprises copper.
24. The semiconductor device according to claim 17 , wherein the third oxide semiconductor layer is in direct contact with a bottom surface of the source electrode and a bottom surface of the drain electrode.
25. A semiconductor device comprising:
a substrate; and
a transistor over the substrate, the transistor comprising:
a first oxide semiconductor layer;
a second oxide semiconductor layer over the first oxide semiconductor layer, the second oxide semiconductor layer comprising a crystalline region;
a third oxide semiconductor layer over the second oxide semiconductor layer;
a gate insulating film over the third oxide semiconductor layer;
a gate electrode over the gate insulating film;
a source electrode over and in direct contact with the second oxide semiconductor layer; and
a drain electrode over and in direct contact with the second oxide semiconductor layer,
wherein a channel formation region of the transistor is provided between the source electrode and the drain electrode, and
wherein a stack of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises the channel formation region.
26. The semiconductor device according to claim 25 , wherein the source electrode and the drain electrode are in direct contact with a top surface of the second oxide semiconductor layer.
27. The semiconductor device according to claim 25 , further comprising a first transistor below the transistor, wherein a channel of the first transistor comprises silicon.
28. The semiconductor device according to claim 25 , further comprising an aluminum oxide layer over and in contact with the transistor.
29. The semiconductor device according to claim 25 ,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises zinc, and
wherein a component ratio of zinc in the first oxide semiconductor layer is different from a component ratio of zinc in the second oxide semiconductor layer.
30. The semiconductor device according to claim 25 , wherein each of the first oxide semiconductor layer and the third oxide semiconductor layer comprises at least one of indium, gallium, tin, aluminum, magnesium, and zinc.
31. The semiconductor device according to claim 25 , wherein each of the source electrode and the drain electrode comprises copper.
32. The semiconductor device according to claim 25 , wherein the third oxide semiconductor layer is in direct contact with a bottom surface of the source electrode and a bottom surface of the drain electrode.