IP Library Granted Patent US 9,368,468
Granted Patent B2
US 9,368,468 · App. 14/586,668 · Granted Jun 14, 2016

Thin integrated circuit chip-on-board assembly

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Quick Facts
Patent No.
US 9,368,468
App. No.
14/586,668
Granted
Jun 14, 2016
Kind
B2
Abstract

An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface, where the first surface of the insulating layer is less than 10 microns below an upper plane of the integrated circuit assembly. An active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the active layer and formed on the second surface of the insulating layer, and is also electrically connected to a printed circuit board.

Claims (16)

1. An integrated circuit assembly comprising:

an insulating layer of a semiconductor-on-insulator die having a first surface and a second surface, the first surface of the insulating layer being less than 10 microns below an upper plane of the integrated circuit assembly, wherein the insulating layer is a buried insulator of the semiconductor-on-insulator die;

an active layer of the semiconductor-on-insulator die contacting the first surface of the insulating layer;

a via hole through the insulating layer and into the active layer;

an electrically conductive material disposed within the via hole and physically contacting the active layer;

a metal bond pad formed on the second surface of the insulating layer;

wherein the metal bond pad is electrically connected to the active layer through the insulating layer by the electrically conductive material; and

a printed circuit board electrically connected to the metal bond pad;

wherein the insulating layer, active layer, metal bond pad and printed circuit board are located below the upper plane.

2. The assembly of claim 1 , wherein the printed circuit board is electrically connected with a solder bump to the active layer.

3. The assembly of claim 1 further comprising a thermal spreading layer coupled to the active layer.

4. The assembly of claim 3 , wherein the thermal spreading layer comprises metal.

5. The assembly of claim 3 , wherein the thermal spreading layer comprises one of copper, aluminum, gold, silver, or tungsten.

6. The assembly of claim 1 , wherein the second surface of the insulating layer is less than 5 microns below the upper plane of the integrated circuit assembly.

7. The assembly of claim 1 , wherein the second surface of the insulating layer is less than 2 microns below the upper plane of the integrated circuit assembly.

8. The assembly of claim 1 , wherein the active layer includes passive devices.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 23, 2016
From: QUALCOMM SWITCH CORP.
To: QUALCOMM INCORPORATED
Reel/Frame 038794/0663 →
CHANGE OF NAME Recorded Oct 16, 2015
From: SILANNA SEMICONDUCTOR U.S.A., INC.
To: QUALCOMM SWITCH CORP.
Reel/Frame 036877/0140 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE NAME PREVIOUSLY RECORDED AT REEL: 035901 FRAME: 0621. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jul 20, 2015
From: STUBER, MICHAEL A.; MOLIN, STUART B.; DRUCKER, MARK; FOWLER, PETER
To: IO SEMICONDUCTOR INCORPORATED
Reel/Frame 036138/0935 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 24, 2015
From: STUBER, MICHAEL A.; MOLIN, STUART B; DRUCKER, MARK; FOWLER, PETER
To: IO SEMICONDUCTOR INCORPORATED
Reel/Frame 035901/0621 →
CHANGE OF NAME Recorded Jun 24, 2015
From: IO SEMICONDUCTOR INCORPORATED
To: SILANNA SEMICONDUCTOR U.S.A., INC.
Reel/Frame 036012/0161 →