Light-emitting device and method for manufacturing the same
An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
1. A light emitting device comprising:
a transistor comprising a first gate electrode layer, a first gate insulating layer, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a second gate insulating layer, and a second gate electrode layer;
a light emitting portion comprising a color filter layer and a light emitting element; and
a connection electrode layer in contact with an electrode layer of the light emitting element,
wherein the first gate electrode layer and the second gate electrode layer overlap each other,
wherein the first gate electrode layer is electrically connected to the second gate electrode layer, and
wherein the connection electrode layer is formed from a same layer as the second gate electrode layer.
2. The light emitting device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
3. The light emitting device according to claim 1 , wherein the oxide semiconductor layer comprises indium, tin, and zinc.
4. The light emitting device according to claim 1 , wherein the oxide semiconductor layer comprises a region being in an oxygen-excess state.
5. The light emitting device according to claim 1 , wherein the second gate insulating layer comprises stacked layers selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum oxynitride film.
6. The light emitting device according to claim 1 , wherein the light emitting element is over the color filter layer.
7. The light emitting device according to claim 1 , wherein emission color of the light emitting element is white.
8. The light emitting device according to claim 1 ,
wherein the light emitting element comprises a first light emitting unit and a second light emitting unit, and
wherein a charge generation layer is provided between the first light emitting unit and the second light emitting unit.
9. The light emitting device according to claim 1 ,
wherein the light emitting element comprises a first light emitting unit and a second light emitting unit,
wherein emission color of the first light emitting unit is blue, and
wherein emission color of the second light emitting unit is yellow.
10. The light emitting device according to claim 1 , wherein the transistor is included in a driver circuit portion.
11. A light emitting device comprising:
a transistor comprising a first gate electrode layer, a first gate insulating layer, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a second gate insulating layer, and a second gate electrode layer;
a light emitting portion comprising a color filter layer and a light emitting element over the color filter layer; and
a connection electrode layer in contact with an electrode layer of the light emitting element,
wherein the first gate electrode layer and the second gate electrode layer overlap each other,
wherein the first gate electrode layer is electrically connected to the second gate electrode layer, and
wherein the connection electrode layer is formed from a same layer as the second gate electrode layer.
12. The light emitting device according to claim 11 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
13. The light emitting device according to claim 11 , wherein the oxide semiconductor layer comprises indium, tin, and zinc.
14. The light emitting device according to claim 11 , wherein the oxide semiconductor layer comprises a region being in an oxygen-excess state.
15. The light emitting device according to claim 11 , wherein the second insulating gate layer comprises stacked layers selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum oxynitride film.
16. The light emitting device according to claim 11 , wherein emission color of the light emitting element is white.
17. The light emitting device according to claim 11 ,
wherein the light emitting element comprises a first light emitting unit and a second light emitting unit, and
wherein a charge generation layer is provided between the first light emitting unit and the second light emitting unit.
18. The light emitting device according to claim 11 ,
wherein the light emitting element comprises a first light emitting unit and a second light emitting unit,
wherein emission color of the first light emitting unit is blue, and
wherein emission color of the second light emitting unit is yellow.