Microelectromechanical systems (MEMS) devices with control circuits and methods of fabrication
The various embodiments described herein provide microelectromechanical systems (MEMS) sensor devices and methods of forming the same. In general, the embodiments provide MEMS sensor devices formed with two semiconductor die that are bonded together. Specifically, a sensor die includes at least one MEMS sensor fabricated thereon, such as MEMS gyroscope or MEMS accelerometer. A control-circuit die includes at least one integrated MEMS control circuit formed on an active area of the die. The control-circuit die is bonded to the sensor die with the active area and the integrated MEMS control circuits on the exterior side. The bonding defines and seals a cavity between the two die that encompasses the MEMS sensor and can be used to seal the MEMS sensor in a vacuum.
1. A method of forming microelectromechanical systems (MEMS) devices comprising:
providing a carrier wafer having a carrier wafer first side and a carrier wafer second side;
providing a control-circuit wafer having a control-circuit wafer first side and a control-circuit wafer second side, the control-circuit wafer including a plurality of integrated MEMS control circuits formed at the control-circuit wafer first side;
bonding the carrier wafer first side to the control-circuit wafer first side with bonding agent applied at locations corresponding to die boundaries on the control-circuit wafer;
providing a sensor wafer having a first side and second side, the sensor wafer including a plurality of MEMS sensors;
bonding the sensor wafer first side to the control-circuit wafer second side; and
sawing the carrier wafer through the bonding agent at the locations corresponding to the die boundaries to separate the carrier wafer from the control-circuit wafer.
2. The method of claim 1 further comprising sawing through the control-circuit wafer and the sensor wafer during the sawing the carrier wafer.
3. The method of claim 1 wherein the step of sawing the carrier wafer stops at the sensor wafer.
4. The method of claim 1 wherein the step of sawing the carrier wafer comprises:
applying a first layer of tape on the carrier wafer second side;
sawing the first layer of tape and the carrier wafer in a first direction;
applying a second layer of tape on the carrier wafer second side; and
sawing the first layer of tape, the second layer of tape, and the carrier wafer in a second direction, the second direction orthogonal to the first direction.
5. The method of claim 1 wherein the step of bonding the sensor wafer first side to the control-circuit wafer second side comprises forming a plurality of bonding agent seal rings, each of the bonding agent seal rings defining a sealed chamber containing at least one plurality of MEMS sensors after the bonding of the sensor wafer first side to the control-circuit wafer second side.
6. The method of claim 1 further comprising the steps of:
applying tape to the sensor wafer second side and applying tape to the carrier wafer first side prior to the step of sawing the carrier wafer.
7. The method of claim 1 further comprising the steps of:
forming a plurality of channels on the carrier wafer first side prior to the step of bonding the carrier wafer first side to the control-circuit wafer first side.
8. The method of claim 1 further comprising the steps of:
forming a plurality of channels on the carrier wafer first side prior to the step of bonding the carrier wafer first side to the control-circuit wafer first side, each of the plurality of channels defined by surrounding ridges, and where the surrounding ridges are at the locations corresponding to the die boundaries.
9. The method of claim 1 further comprising the step of:
thinning the control-circuit wafer by grinding the control-circuit wafer second side after the step of bonding the carrier wafer first side to the control-circuit wafer first side.
10. The method of claim 1 further comprising the step of:
thinning the carrier wafer by grinding the carrier wafer second side after the step of bonding the sensor wafer first side to the control-circuit wafer second side.
11. The method of claim 1 further comprising the step of:
forming a plurality of vertical interconnects through the control-circuit wafer, the plurality of vertical interconnects extending from the control circuit wafer first side to the control circuit wafer second side to provide electrical connections between the plurality of MEMS sensors and the plurality of integrated MEMS control circuits.
12. The method of claim 1 further comprising the steps of:
forming a plurality of channels on the control-circuit wafer second side.
13. A method of forming microelectromechanical systems (MEMS) devices comprising:
providing a carrier wafer having a carrier wafer first side and a carrier wafer second side;
providing a control-circuit wafer having a control-circuit wafer first side and a control-circuit wafer second side, the control-circuit wafer including a plurality of integrated MEMS control circuits formed at the control-circuit wafer first side;
bonding the carrier wafer first side to the control-circuit wafer first side with bonding agent applied at locations corresponding to die boundaries on the control-circuit wafer;
thinning the control-circuit wafer by grinding the control-circuit wafer second side;
forming a plurality interconnects from the control-circuit wafer second side to the control-circuit wafer first side to provide connections to the plurality of integrated MEMS control circuits;
providing a sensor wafer having a first side and second side, the sensor wafer including a plurality of MEMS sensors;
bonding the sensor wafer first side to the control-circuit wafer second side to form a plurality of sealed chambers, with each of the plurality of sealed chambers containing at least one of the plurality of MEMS sensors; and
sawing the carrier wafer through the bonding agent at the locations corresponding to the die boundaries to separate the carrier wafer from the control-circuit wafer.
14. The method of claim 13 further comprising sawing through the control-circuit wafer and the sensor wafer during the sawing the carrier wafer.
15. The method of claim 13 wherein the step of sawing the carrier wafer does not further saw into the sensor wafer.
16. A microelectromechanical systems (MEMS) device comprising:
a control-circuit die having a control-circuit die first side and a control-circuit wafer second side, the control-circuit die including at least one integrated MEMS control circuit formed at the control-circuit die first side; and
a sensor die having a first side and second side, the sensor die including at least one MEMS sensor formed at the sensor die first side, and wherein the sensor die first is bonded to the control-circuit second side.
17. The MEMS device of claim 16 further comprising:
a plurality of vertical interconnects in the control-circuit die, the plurality of vertical interconnects extending from the control circuit die first side to the control circuit die second side to provide electrical connections between at the at least one MEMS sensor and the at least one integrated MEMS control circuit.
18. The MEMS device of claim 16 further comprising a cavity formed at the control-circuit die second side, the cavity defined by a plurality of surrounding ridges in the control-circuit die.
19. The MEMS device of claim 16 further comprising a package containing the control-circuit die and the sensor die.
20. The MEMS device of claim 16 further comprising a seal ring between the control-circuit die and the sensor die, the seal ring including bonding agent to and defining a sealed chamber containing the at least one MEMS sensor.