Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium

1. A substrate processing apparatus, comprising:

a reaction tube configured to accommodate a plurality of substrates and to be supplied with a gas generated by one of vaporizing or turning into mist a solution containing a reactant dissolved in a solvent;

a lid configured to close the reaction tube and including a plate-shaped lid protector inside the reaction tube, the lid protector being configured to prevent the lid from coming in contact with the reactant;

a first heater configured to heat the plurality of substrates;

a thermal conductor placed on an upper surface of the lid such that a lower planar surface thereof contacts the upper surface of the lid protector;

a second heater placed around an outer circumference of a lower portion of the reaction tube and surrounding a sidewall surface thereof concentrically, the second heater being configured to heat the lid and the gas flowing near the lid; and

a heating element placed on the lid on a lower surface thereof, the heating element being configured to heat the lid.

2. The substrate processing apparatus according to claim 1 , wherein the reactant is hydrogen peroxide H 2 O 2 and the solvent is water H 2 O.

3. The substrate processing apparatus according to claim 1 , wherein the reactant and the solvent have mutually different vaporizing points.

4. The substrate processing apparatus according to claim 1 , wherein the lid protector is a plate made with quartz.

5. The substrate processing apparatus according to claim 1 , wherein the second heater is made with one or both of a resistance heating body or a radiation heating body.

6. The substrate processing apparatus according to claim 1 , wherein the second heater heats an area outside an area heated by the first heater.

7. The substrate processing apparatus according to claim 1 , further comprising a control unit configured to control temperatures of the second heater and the heating element so that liquefaction of the gas in the reaction tube is suppressed.

8. The substrate processing apparatus according to claim 1 , wherein the lid is made with a non-metallic material having thermal conductivity not less than 10 W/mK.

9. The substrate processing apparatus according to claim 1 , wherein the lid is made with one of silicon carbide (SiC), aluminum oxide (AlO), aluminum nitride (AlN), silicon nitride (SiN), or zirconium oxide (ZrO).

10. The substrate processing apparatus according to claim 1 , wherein the reaction tube is provided with a third heater and a state converter, and the solution, in a liquid state thereof, containing the reactant dissolved in the solvent is supplied into the reaction tube and then turned to a gaseous state thereof in the reaction tube by the third heater and the state converter.

11. A method of manufacturing a semiconductor device comprising:

providing a substrate processing apparatus comprising: a reaction tube configured to accommodate a plurality of substrates; a lid configured to close the reaction tube and including a plate-shaped lid protector inside the reaction tube, the lid protector being configured to prevent the lid from coming in contact with the reactant; a first heater configured to heat the plurality of substrates; a thermal conductor placed on an upper surface of the lid such that a lower planar surface thereof contacts the upper surface of the lid protector; a second heater placed around an outer circumference of the reaction tube and surrounding a sidewall surface thereof concentrically; and a heating element placed on the lid on a lower surface thereof, the heating element being configured to heat the lid;

heating the plurality of substrates accommodated in the reaction tube with the first heater; and

supplying in the reaction tube a gas generated by one of vaporizing or turning into mist a solution containing a reactant dissolved in a solvent, wherein the second heater and the heating element are controlled to have temperatures at which liquefaction of the gas flowing near the lid is prevented.

12. The method of manufacturing a semiconductor device according to claim 11 , wherein in the supplying of the reactant in the reaction tube, the reactant in a liquid state thereof is supplied into the reaction tube and vaporized by a third heater and a state converter provided at the reaction tube.

13. A non-transitory computer-readable recording medium for use with a substrate processing apparatus, the apparatus comprising:

a reaction tube configured to accommodate a plurality of substrates; a lid configured to close the reaction tube and including a plate-shaped lid protector inside the reaction tube, the lid protector being configured to prevent the lid from coming in contact with the reactant; a first heater configured to heat the plurality of substrates; a thermal conductor placed on an upper surface of the lid such that a lower planar surface thereof contacts the upper surface of the lid protector; a second heater placed around an outer circumference of the reaction tube and surrounding a sidewall surface thereof concentrically; and a heating element placed on the lid on a lower surface thereof, the heating element being configured to heat the lid,

the recording medium having stored a program configured to cause a computer to execute:

a procedure of heating the plurality of substrates accommodated in the reaction tube with the first heater; and

a procedure of supplying in the reaction tube a gas generated by one of vaporizing or turning into mist a solution containing a reactant dissolved in a solvent, wherein the second heater and the heating element are controlled to have temperatures at which liquefaction of the gas flowing near the lid is prevented.

14. The non-transitory computer-readable recording medium according to claim 13 , wherein the procedure of supplying the gas in the reaction tube includes a procedure of supplying the solution containing the reactant dissolved in the solvent into the reaction tube and vaporizing the solution with a third heater and a state converter provided at the reaction tube.