IP Library Granted Patent US 10,539,873
Granted Patent B2
US 10,539,873 · App. 14/605,465 · Granted Jan 21, 2020

Coating compositions suitable for use with an overcoated photoresist

Inventors: James F. Cameron (Cambridge, MA); Jin Wuk Sung (Worcester, MA); John P. Amara (Charlestown, MA); Gregory P. Prokopowicz (Worcester, MA); David A. Valeri (Leominster, MA)
Assignee: Rohm and Haas Electronic Materials LLC
G03F7/091B05D1/005B05D3/0254B05D3/06B05D5/061B05D7/54C08F220/36C09D5/006C09D133/12G03F7/11G03F7/16G03F7/20G03F7/322
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Quick Facts
Patent No.
US 10,539,873
App. No.
14/605,465
Granted
Jan 21, 2020
Kind
B2
Abstract

Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Claims (15)

1. A coated substrate comprising:

(a) a coating composition layer comprising a resin, the resin comprising a reaction product of an imide-containing dienophile and a polycyclic aromatic group; and

(b) a photoresist layer over the coating composition layer.

2. The substrate of claim 1 wherein the reaction component is a terpolymer, tetrapolymer or pentapolymer.

3. The substrate of claim 1 wherein the coating composition layer resin comprises a reaction product of (1) a dienophile and (2) an anthraecene or pentacene group.

4. A method for forming a photoresist relief image comprising:

(a) applying over a substrate a coating layer of a composition comprising a resin, the resin comprising a reaction product produced from reagents comprising an imide-containing dienophile and a polycyclic aromatic group;

(b) applying a photoresist layer above the coating composition layer.

5. The method of claim 4 wherein the applied photoresist layer is exposed to patterned radiation and then developed with an aqueous alkaline developer composition, whereby the developer composition selectively removes in both the photoresist layer and the underlying coating composition layer the image as defined in the photoresist layer by patterned radiation.

6. An antireflective composition for use with an overcoated photoresist, the antireflective composition comprising:

a resin comprising a reaction product of reagents comprising (1) a dienophile and (2) a compound comprising a pentacene group; and

an acid or acid generator compound.

7. The antireflective composition of claim 6 wherein the composition comprises an acid generator compound.

8. The antireflective composition of claim 6 wherein the composition comprises a photoacid generator compound.

9. The antireflective composition of claim 6 wherein the composition comprises a thermal generator compound.

Assignments (4)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS LLC
To: DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC
Reel/Frame 069272/0383 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2016
From: CAMERON, JAMES F., MR.; SUNG, JIN WUK, MR.; AMARA, JOHN P., MR.; PROKOPOWICZ, GREGORY P., MR.; VALERI, DAVID A., MR.
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 040708/0557 →