Non-crystalline inorganic light emitting diode
Non-crystalline inorganic light emitting diode. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a non-crystalline inorganic light emission layer and first and second semiconducting non-crystalline inorganic charge transport layers surrounding the light emission layer. The light emission layer may be amorphous. The charge transport layers may be configured to inject one type of charge carrier and block the other type of charge carrier.
1. An article of manufacture comprising:
a light emitting diode comprising:
a non-crystalline inorganic light emission layer; and
first and second semiconducting non-crystalline inorganic charge transport layers surrounding said light emission layer, wherein said first and second semiconducting charge transport layers are doped to opposite conduction types.
2. The article of manufacture of claim 1 wherein said light emission layer is amorphous.
3. The article of manufacture of claim 1 wherein said charge transport layers have a thickness greater than 4.0 nm.
4. The article of manufacture of claim 1 wherein said charge transport layers are configured to conduct at least one type of charge carrier.
5. The article of manufacture of claim 1 further comprising a p-intrinsic-n (PiN) type diode.
6. The article of manufacture of claim 1 further comprising a substrate configured to support said light emitting diode.
7. The article of manufacture of claim 6 wherein said substrate conducts current to said light emitting diode.
8. The article of manufacture of claim 6 wherein said substrate comprises metal.
9. The article of manufacture of claim 6 wherein said substrate comprises a polymer.
10. The article of manufacture of claim 6 wherein said substrate is configured to be flexible when said light emitting diode is functioning.
11. The article of manufacture of claim 6 wherein said substrate with said light emitting diode applied is adaptable to a non-planar configuration.
12. The article of manufacture of claim 1 further comprising electronics to convert a source of alternating current to direct current for use by said light emitting diode; and a base to couple said electronics to said source of alternating current.
13. The article of manufacture of claim 1 comprising a single said light emitting diode of greater than 4 square centimeters.
14. An article of manufacture comprising: a light emitting diode comprising: a first non-crystalline inorganic layer configured for transporting holes and blocking electrons and having a hole transport layer (HTL) conduction band and a hole transport layer (HTL) valence band;
a second non-crystalline inorganic layer, disposed on said first layer, configured for emitting light and having an emission conduction band and a emission valence band; and
a third non-crystalline inorganic layer, disposed on said second layer, configured for transporting electrons and blocking holes and having an electron transport layer (ETL) conduction band and an electron transport layer (ETL) valence band, wherein alignment of said HTL, emission and ETL conduction bands and said HTL, emission and ETL valence bands favor both charge injection and charge confinement.
15. The article of manufacture of claim 14 wherein:close alignment of said HTL valence band to said emission valence band favors hole injection.
16. The article of manufacture of claim 14 wherein: close alignment of said emission conduction band and said ETL conduction band favors electron injection.
17. The article of manufacture of claim 14 wherein: a difference between said HTL conduction band and said emission conduction band favors electron confinement.
18. The article of manufacture of claim 14 wherein: a difference between said emission valence band and said ETL valence band favors hole confinement.