Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device is disclosed. The method includes forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber; exhausting the precursor gas in the process chamber through an exhaust system; confining a reaction gas, which differs in chemical structure from the precursor gas, in the process chamber by supplying the reaction gas to the substrate in the process chamber while the exhaust system is closed; and exhausting the reaction gas in the process chamber through the exhaust system while the exhaust system is opened.
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a plurality of times, the cycle including non-simultaneously performing:
(a) supplying a precursor gas containing a first element to the substrate in a process chamber to form a first layer containing the first element;
(b) exhausting the precursor gas in the process chamber through an exhaust system;
(c) confining a reaction gas containing a second element in the process chamber by supplying the reaction gas to the substrate in the process chamber while the exhaust system is closed to form a second layer containing the first element and the second element by modifying the first, layer; and
(d) exhausting the reaction gas in the process chamber through the exhaust system while the exhaust system is opened,
wherein the act of (a) includes setting an internal pressure of the process chamber at the end of the act of (a) to a first pressure, and the act of (c) includes setting the internal pressure of the process chamber at the end of the act of (c) to a second pressure higher than the first pressure,
wherein the reaction gas does not comprise silicon, and
an opening degree of an exhaust flow path of the exhaust system in the act of (c) is set to be smaller than an opening degree of the exhaust flow path in the act of (a).
2. The method of claim 1 , wherein in the act of (c), the exhaust system is sealed.
3. The method of claim 1 , wherein in the act of (c), the exhaust system is fully closed.
4. method of claim 1 , wherein in the act of (c), the exhaust flow path opening closing unit installed in the exhaust system is fully closed.
5. The method of claim 1 , wherein in the act of (c), the reaction gas is continuously supplied into the process chamber.
6. The method of claim 1 , wherein in the act of (c), the internal pressure of the process chamber is continuously increased.
7. The method of claim 1 , wherein in the act of (c), the reaction gas is allowed to preliminarily flow through the process chamber while the exhaust system is opened, and the reaction gas is then supplied into and confined in the process chamber while the exhaust system is closed.
8. The method of claim 1 , wherein an opening degree of an exhaust flow path opening/closing unit installed in the exhaust system in the act of (c) is set to be smaller than an opening degree of an exhaust flow path opening/closing unit in the act of (a).
9. The method of claim 1 , wherein the reaction gas comprises at least one selected from a group consisting of a nitrogen-containing gas, a carbon-containing gas, a nitrogen- and carbon-containing gas, a boron-containing gas, and a boron-, nitrogen- and carbon-containing gas.
10. The method of claim 1 , wherein the reaction gas comprises a nitrogen-containing gas.
11. The method of claim 1 , wherein the reaction gas comprises a hydrogen nitride-based gas.
12. The method of claim 1 , wherein the reaction gas comprises at least one selected from a group consisting of an ammonia gas, a hydrazine gas, and a diazene gas.
13. The method of claim 1 , wherein the cycle is performed the plurality of times under a non-plasma condition.
14. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a method comprising:
performing a process of forming a film on a substrate by performing a cycle a plurality of times, the cycle including non-simultaneously performing:
(a) supplying a precursor gas containing a first element to the substrate in a process chamber to form a first layer containing the first element;
(b) exhausting the precursor gas in the process chamber through an exhaust system;
(c) confining a reaction gas containing a second element in the process chamber by supplying the reaction gas to the substrate in the process chamber while the exhaust system is closed to form a second layer containing the first element and the second element by modifying the first, layer; and
(d) exhausting the reaction gas in the process chamber through the exhaust system while the exhaust system is opened,
wherein the act of (a) includes setting an internal pressure of the process chamber at the end of the act of (a) to a first pressure, and
the act of (c) includes setting the internal pressure of the process chamber at the end of the act of(c) to a second pressure higher than the first pressure,
wherein the reaction gas does not comprise silicon, and
an opening degree of an exhaust flow path of the exhaust system in the act of (c) is set to be smaller than an opening degree of the exhaust flow path in the act of (a).
15. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a plurality of times, the cycle including non-simultaneously performing:
(a) supplying a precursor gas containing a first element to the substrate in a process chamber to form a first layer containing the first element;
(b) exhausting the precursor gas in the process chamber through an exhaust system;
(c) confining a reaction gas containing a second element in the process chamber by supplying the reaction gas to the substrate in the process chamber while the exhaust system is closed to form a second layer containing the first element and the second element by modifying the first, layer; and
(d) exhausting the reaction gas in the process chamber through the exhaust system while the exhaust system is opened,
wherein the act of (a) includes setting an internal pressure of the process chamber at the end of the act of (a) to a first pressure, and the act of (c) includes setting the internal pressure of the process chamber at the end of the act of (c) to a second pressure higher than the first pressure,
wherein the act of (a) includes setting an internal pressure of the process chamber at the end of the act of (a) to a first pressure, and
the act of (c) includes setting an internal pressure of the process chamber at the end of act (c) to a second pressure higher than the first pressure,
wherein during the act of (b), the exhaust system is opened such that the pressure decreases continuously until the act of (c),
during the act of (d), the exhaust system is opened such that the pressure decreases continuously until the subsequent act of (a), and
an opening degree of an exhaust flow path of the exhaust system in the act of (c) is set to be smaller than an opening degree of the exhaust flow path in the act of (a).