IP Library › Granted Patent US 9,708,507
Granted Patent B2
US 9,708,507 · App. 14/632,311 · Granted Jul 18, 2017

Method for improving chemical resistance of polymerized film, polymerized film forming method, film forming apparatus, and electronic product manufacturing method

Inventors: Kippei Sugita (Nirasaki, JP); Tatsuya Yamaguchi (Nirasaki, JP); Yoshinori Morisada (Nirasaki, JP); Makoto Fujikawa (Nirasaki, JP)
Assignee: TOKYO ELECTRON LIMITED
C09D179/08C08G73/105C08G73/1071C23C16/30C23C16/56H01L21/67109B05D1/60B05D3/0254H01L21/02063H01L21/3065H01L21/31058
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Quick Facts
Patent No.
US 9,708,507
App. No.
14/632,311
Granted
Jul 18, 2017
Kind
B2
Abstract

A method for improving a chemical resistance of a polymerized film, which is formed on a surface of a target object and to be processed by a chemical, includes: consecutively performing a treatment for improving the chemical resistance of the polymerized film subsequent to formation of the polymerized film within a processing chamber of a film forming apparatus where the polymerized film is formed, without unloading the target object from the processing chamber.

Claims (36)

1. A method for forming a polyimide film on a surface of a target object in which a bonding layer and a through via are formed, the method comprising:

performing a treatment for increasing resistance of the polyimide film to a cleaning agent containing an alkaline compound subsequent to formation of the polyimide film within a processing chamber of a film forming apparatus where the polyimide film is formed, the treatment being performed at a temperature less than a heat resistance temperature of the bonding layer without unloading the target object from the processing chamber after the formation of the polyimide film;

anisotropically etching the polyimide film with the treatment for increasing resistance such that the polyimide film remains on a side surface of the through via; and

performing a cleaning process using the cleaning agent with respect to the polyimide film remaining on the side surface of the through via.

2. The method of claim 1 , wherein the treatment for increasing the resistance to the cleaning agent is a heat treatment which is performed at a temperature higher than a formation temperature of the polyimide film.

3. The method of claim 2 , wherein the heat treatment comprises:

increasing a temperature of the target object accommodated in the processing chamber to be higher than the formation temperature of the polyimide film by increasing an output of a heating device provided in the film forming apparatus to be higher than an output used during the formation of the polyimide film;

suppressing an increase in the temperature of the target object accommodated in the processing chamber by turning off the heating device and by turning on a cooling device provided in the film forming apparatus; and

returning an internal pressure of the processing chamber to an atmospheric pressure by controlling an exhaust device provided in the film forming apparatus.

4. The method of claim 3 , wherein increasing a temperature of the target object and suppressing an increase in the temperature of the target object include repeating introduction of an inert gas into the processing chamber and discharge of the inert gas from the processing chamber.

5. The method of claim 2 , wherein a temperature of the target object during the heat treatment is kept in a range equal to or higher than the formation temperature of the polyimide film and lower than a pyrolysis temperature of the polyimide film.

6. A method for forming a polyimide film on a surface of a target object in which a bonding layer and a through via are formed, the method comprising:

accommodating the target object in a processing chamber of a film forming apparatus;

forming the polyimide film on the surface of the target object within the processing chamber; and

performing a treatment for increasing a resistance of the polyimide film to a cleaning agent containing an alkaline compound subsequent to forming the polyimide film within the processing chamber of the film forming apparatus where the polyimide film is formed, the treatment being performed at a temperature less than a heat resistance temperature of the bonding layer without unloading the target object from the processing chamber after the formation of the polyimide film;

anisotropically etching the polyimide film with the treatment for increasing resistance such that the polyimide film remains on a side surface of the through via; and

performing a cleaning process using the cleaning agent with respect to the polyimide film remaining on the side surface of the through via.

7. The method of claim 6 , wherein the treatment for increasing the resistance of the polyimide film to the cleaning agent is a heat treatment which is performed at a temperature higher than a formation temperature of the polyimide film in forming the polyimide film.

8. The method of claim 7 , wherein the heat treatment comprises:

increasing a temperature of the target object accommodated in the processing chamber to be higher than the formation temperature of the polyimide film by increasing an output of a heating device provided in the film forming apparatus to be higher than an output used during forming the polyimide film;

suppressing an increase in the temperature of the target object accommodated in the processing chamber by turning off the heating device and by turning on a cooling device provided in the film forming apparatus; and

returning an internal pressure of the processing chamber to an atmospheric pressure by controlling an exhaust device provided in the film forming apparatus.

9. The method of claim 8 , wherein increasing a temperature of the target object and suppressing an increase in the temperature of the target object include repeating introduction of an inert gas into the processing chamber and discharge of the inert gas from the processing chamber.

10. The method of claim 7 , wherein a temperature of the target object during the heat treatment is kept in a range equal to or higher than the formation temperature of the polyimide film and lower than a pyrolysis temperature of the polyimide film.

11. An electronic product manufacturing method for manufacturing an electronic product using a target object in which a bonding layer and a through via are formed, the method comprising:

forming a polyimide film on a surface of the target object within a processing chamber;

performing a treatment for increasing resistance of the polyimide film to a cleaning agent containing an alkaline compound subsequent to the formation of the polyimide film within the processing chamber where the polyimide film is formed, the treatment being performed at a temperature less than a heat resistance temperature of the bonding layer without unloading the target object having the polyimide film formed thereon from the processing chamber;

anisotropically etching the polyimide film with the treatment for increasing resistance such that the polyimide film remains on a side surface of the through via; and

performing a cleaning process using the cleaning agent with respect to the polyimide film remaining on the side surface of the through via.

12. The method of claim 11 , wherein the treatment for increasing the resistance of the polyimide film to the cleaning agent is a heat treatment which is performed at a temperature higher than a formation temperature of the polyimide film in forming the polyimide film.

13. The method of claim 12 , wherein the heat treatment comprises:

increasing a temperature of the target object accommodated in the processing chamber to be higher than the formation temperature of the polyimide film by increasing an output of a heating device provided in a film forming apparatus to be higher than an output used during forming the polyimide film;

suppressing an increase in the temperature of the target object accommodated in the processing chamber by turning off the heating device and by turning on a cooling device provided in the film forming apparatus; and

returning an internal pressure of the processing chamber to an atmospheric pressure by controlling an exhaust device provided in the film forming apparatus.

14. The method of claim 13 , wherein increasing a temperature of the target object and suppressing an increase in the temperature of the target object include repeating introduction of an inert gas into the processing chamber and discharge of the inert gas from the processing chamber.

15. The method of claim 12 , wherein a temperature of the target object during the heat treatment is kept in a range equal to or higher than the formation temperature of the polyimide film and lower than a pyrolysis temperature of the polyimide film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 31, 2015
From: SUGITA, KIPPEI; YAMAGUCHI, TATSUYA; MORISADA, YOSHINORI; FUJIKAWA, MAKOTO
To: TOKYO ELECTRON LIMITED
Reel/Frame 035300/0969 →
Priority Claims (1)
JP 2014-037098 · Feb 27, 2014 · national
Continuity (1)
Related Publication 20150240121A1 · Aug 27, 2015