Method for increased target utilization in ion beam deposition tools
View Patent ↗In a sputter deposition tool ( 100 ) of the type in which an ion source ( 101 ) generates a beam directed at a sputtering target, the sputtering target comprises an elongated exterior skirt ( 102 ) and a generally circular insert ( 103 ) positioned within the skirt, the surfaces of the skirt and insert being relatively coplanar and forming the surface of the target, with the elongated dimension of the skirt being axially oriented toward the ion source. The insert is rotated within the skirt to one of several positions during use of the target by the sputter deposition tool, to distribute wear of the target around the rotating insert and thus increase the utilization and useful life of the overall target assembly.
1. An ion beam sputter deposition tool, comprising
a. an ion source generating a beam for direction to a sputtering target;
b. a sputtering target positioned for bombardment by the ion source having a generally planar surface, wherein the sputtering target comprises an exterior skirt and an insert positioned within the skirt, the surfaces of the skirt and insert being relatively coplanar and forming the generally planar surface of the target, and
c. a motorized means for rotating the insert within the skirt on an axis perpendicular to the generally planar surface of the target, to one of several positions during use of the target by the sputter deposition tool.
2. The tool of claim 1 wherein the target insert rotates continuously during use of the sputter deposition tool.
3. The tool of claim 1 wherein the target insert rotates discontinuously during use of the sputter deposition tool.
4. The tool of claim 1 wherein the target insert rotates in an indexed manner during pauses in use of the sputter deposition tool.
5. The tool of claim 1 wherein the generally planar surface of the sputtering target is angled away from the ion source.
6. The tool of claim 1 wherein the skirt has an elongated dimension.
7. The tool of claim 6 wherein the elongated dimension of the skirt is axially oriented toward the ion source.