SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND CONTROL PROGRAM
The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.
1 . A substrate processing apparatus, comprising:
a process chamber into which a substrate is transferred;
a heating device which heats the substrate, transferred into the process chamber, from a periphery side of the substrate;
a cooling device which cools the substrate, transferred into the process chamber, from the periphery side of the substrate;
a process gas supply unit which supplies a process gas into the process chamber; and
a control unit which controls each of the heating device, the cooling device, and the process gas supply unit to form a predetermined film on the substrate by executing a first control, in which the heating device and the cooling device are operated; executing a second control, in which operation of at least the cooling device is stopped, after the first control; and supplying the process gas into the process chamber by operating the process gas supply unit at least during execution of the second control.
2 . The substrate processing apparatus of claim 1 , wherein the control unit controls the process gas supply unit to supply the process gas into the process chamber, in a specific time period at least after the first control is switched to the second control.
3 . The substrate processing apparatus of claim 1 , wherein the control unit controls the process gas supply unit to start supplying the process gas into the process chamber when the first control is being executed.
4 . The substrate processing apparatus of claim 1 , wherein the control unit controls the process gas supply unit to supply the process gas into the process chamber concurrently with a timing of starting the second control.
5 . The substrate processing apparatus of claim 1 , wherein the control unit controls each of the heating device, the cooling device, and the process gas supply unit to alternately and repeatedly execute the first control and the second control a predetermined number of times.
6 . (canceled)
7 . (canceled)
8 . (canceled)
9 . A semiconductor device manufacturing method, comprising:
a first process in which a substrate is transferred into a process chamber;
a second process in which the substrate transferred into the process chamber is cooled from a periphery side of the substrate by a cooling device while the substrate is heated from the periphery side of the substrate by a heating device;
a third process in which a process gas supply unit is operated to start supplying a process gas into the process chamber during execution of the second process; and
a fourth process in which operation of the cooling device is stopped while the process gas is supplied in the third process after the second process ends.
10 . (canceled)
11 . A non-transitory computer-readable recording medium that records a control program for causing a computer to execute:
a first process in which a substrate is transferred into a process chamber;
a second process in which the substrate transferred into the process chamber is cooled from a periphery side of the substrate by a cooling device while the substrate is heated from the periphery side of the substrate by a heating device;
a third process in which a process gas supply unit is operated to start supplying a process gas into the process chamber during execution of the second process; and
a fourth process in which operation of the cooling device is stopped while the process gas is supplied by the third process, after the second process ends.
12 . (canceled)
13 . A substrate processing apparatus, comprising:
a process chamber into which a substrate is transferred;
a heating device which heats the substrate, transferred into the process chamber, from a periphery side of the substrate;
a cooling device which cools the substrate, transferred into the process chamber, from the periphery side of the substrate;
a process gas supply unit which supplies a process gas into the process chamber; and
a control unit which controls each of the heating device, the cooling device, and the process gas supply unit to form a predetermined film on the substrate by executing a first control in which the heating device and the cooling device are operated; executing a third control in which operation of at least the cooling device is stopped after the first control and the heating device is controlled by setting a setting of the heating device to be lower than a process temperature; and supplying the process gas into the process chamber by operating the process gas supply unit at least during execution of the third control.
14 . The substrate processing apparatus of claim 1 , wherein the control unit controls the process gas supply unit to supply the process gas into the process chamber at a timing that is different from a timing of starting the second control.
15 . The substrate processing apparatus of claim 1 , further comprising a temperature control part which controls at least a temperature of the substrate,
wherein the control unit performs a feedback-control on the temperature control part based on a temperature detected by a temperature detection device which is installed at a position corresponding to the temperature control part.
16 . The substrate processing apparatus of claim 13 , wherein the control unit controls the process gas supply unit to supply the process gas into the process chamber concurrently with a timing of starting the third control.
17 . The substrate processing apparatus of claim 13 , wherein the control unit controls the process gas supply unit to supply the process gas into the process chamber at a timing that is different from a timing of starting the third control.