The purpose of the present invention is to provide a polishing pad that hardly generates scratches on a surface of a subject to be polished. This polishing pad is characterized in that: the polishing pad is provided with a polishing layer having a polishing region and a light-transmitting region; the light-transmitting region includes a surface layer positioned on the pad surface side, and at least one soft layer laminated under the surface layer, and the soft layer has a hardness lower than that of the surface layer.
1. A polishing pad provided with a polishing layer having a polishing region and a light-transmitting region, wherein the light-transmitting region includes a surface layer positioned on the pad surface side and at least one soft layer laminated under the surface layer, and the soft layer has a hardness lower than that of the surface layer, wherein the Asker A hardness of the surface layer is 35 to 80 degrees and the Asker A hardness of the soft layer is 30 to 60 degrees.
2. A polishing pad provided with a polishing layer having a polishing region and a light-transmitting region, wherein the light-transmitting region includes a surface layer positioned on the pad surface side and at least one soft layer laminated under the surface layer, and the soft layer has a hardness lower than that of the surface layer, wherein the difference in the Asker A hardness between the surface layer and the soft layer is 5 degrees or more.
3. The polishing pad according to claim 1 , wherein the difference in the Asker A hardness between the surface layer and the soft layer is 5 degrees or more.
4. The polishing pad according to claim 1 , wherein the soft layer is formed of one layer.
5. A method for producing a semiconductor device, comprising the step of polishing the surface of a semiconductor wafer by using the polishing pad according to claim 1 .
6. The polishing pad according to claim 2 , wherein the soft layer is formed of one layer.
7. A method for producing a semiconductor device, comprising the step of polishing the surface of a semiconductor wafer by using the polishing pad according to claim 2 .
8. The polishing pad according claim 3 , wherein the soft layer is formed of one layer.
9. A method for producing a semiconductor device, comprising the step of polishing the surface of a semiconductor wafer by using the polishing pad according to claim 3 .
10. A method for producing a semiconductor device, comprising the step of polishing the surface of a semiconductor wafer by using the polishing pad according to claim 4 .
11. A method for producing a semiconductor device, comprising the step of polishing the surface of a semiconductor wafer by using the polishing pad according to claim 6 .
12. A method for producing a semiconductor device, comprising the step of polishing the surface of a semiconductor wafer by using the polishing pad according to claim 8 .