Composition for forming overlay film, and resist pattern formation method employing the same
View Patent ↗The objective of this invention is to provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape; and also to provide a pattern formation method employing that composition is described. The means for solving this objective is a composition for forming a topcoat layer, comprising a solvent and a fullerene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development.
1. A composition for forming a topcoat layer, comprising of a solvent, a polymer, a fullerene derivative having a phenolic hydroxyl group, wherein the phenolic hydroxyl group is selected from the group consisting of
2. The composition for forming a topcoat layer according to claim 1 , wherein said fullerene derivative comprises a main chain having 60, 70, 76, 78, 82, 84, 90, 94 or 96 carbon atoms.
3. The composition for forming a topcoat layer according to of claim 1 , wherein the content of said fullerene derivative is 0.01 to 10 wt % based on the total weight of the composition.
4. The composition for forming a topcoat layer according to claim 1 , wherein said polymer has a deep-UV absorbing group.
5. The composition for forming a topcoat layer according to claim 4 , wherein the content of said polymer is 0.01 to 10 wt % based on the total weight of the composition.
6. The composition for forming a topcoat layer according to claim 1 , wherein the content of said polymer is 0.01 to 10 wt % based on the total weight of the composition.
7. The composition for forming a topcoat layer according to claim 1 , wherein said fullerene derivative comprises has 3 or more hydrophilic groups.
8. The composition for forming a topcoat layer according to claim 1 , wherein said fullerene derivative comprises has 3 or more hydrophilic groups.
9. The composition according to claim 1 wherein the polymer comprises a hydrophilic group having effect of making the polymer soluble in water selected from the group consisting of hydroxyl group, carboxyl group, sulfo group, substituted amino, unsubstituted amino group, substituted ammonium, unsubstituted ammonium group, carboxylic ester group, sulfonic ester group, substituted amido group, unsubstituted amido group, alkyleneoxide group, and oxime group.
10. The composition according to claim 1 wherein the solvent is an aqueous solvent.
11. The composition according to claim 1 wherein the solvent is comprised of a solvent selected from the group consisting of monoalcohols, polyols and alkyl ethers of polyols.
12. A pattern formation method comprising the steps of:
casting a resist composition on a substrate, to form a resist layer,
coating the resist layer with a composition for forming a topcoat layer wherein said composition for forming a topcoat layer comprises a solvent, a polymer, a fullerene derivative having a phenolic hydroxyl group, wherein the phenolic hydroxyl group is selected from the group consisting of
heating to harden the composition on the resist layer,
subjecting the resist layer to exposure by use of extreme UV light, and
developing the exposed resist layer with an alkali aqueous solution.
13. The pattern formation method according to claim 12 , wherein said extreme UV light has a wavelength in the range of 5 to 20 nm.
14. The pattern formation method according to claim 12 , wherein the formed topcoat has a thickness of 1 to 100 nm.
15. The pattern formation method according to claim 12 , wherein the heating step is carried out at a temperature of 25 to 150° C.