Reversible top/bottom MEMS package

1. A semiconductor device comprising:

a base substrate comprising a plurality of metal traces and an opening;

a die coupled to a first surface of the base substrate and positioned over the opening;

a frame member coupled to the first surface of the base substrate wherein the die is positioned interior of the frame member;

a cover substrate coupled to the frame member; and

conductive plating on the frame member that provides a signal line for communicating signals between the base substrate and the cover substrate.

2. A semiconductor device in accordance with claim 1 , wherein the conductive plating also couples a ground plane in the base substrate to a ground plane in the cover substrate.

3. A semiconductor device in accordance with claim 1 , wherein the conductive plating is exposed at an outer surface of the frame member.

4. A semiconductor device in accordance with claim 1 , wherein the conductive plating is exposed at an inner perimeter of the frame member.

5. A semiconductor device in accordance with claim 1 , further comprising conductive vias within the frame member, the conductive vias coupled to the metal traces of the base substrate.

6. A semiconductor device in accordance with claim 5 , wherein at least one of the conductive vias within the frame member comprises a ground via.

7. A semiconductor device in accordance with claim 5 , wherein at least one of the conductive vias within the frame member comprises a signal via.

8. A semiconductor device in accordance with claim 7 , further comprising a second die coupled to the first surface of the base substrate.

9. A semiconductor device in accordance with claim 8 , wherein a wirebond couples the second die to a metal trace of the base substrate, the metal trace being coupled to the signal via.

10. A semiconductor device in accordance with claim 1 , wherein the conductive plating extends from a top surface of the frame member, down an inner sidewall of the frame member, and on a bottom surface of the frame member.

11. A semiconductor device in accordance with claim 1 , wherein the conductive plating extends from a top surface of the frame member, down an inner sidewall of the frame member, and is coupled to the metal traces of the base substrate.

12. A semiconductor device comprising:

a base substrate comprising metal traces;

a first electronic component coupled to a first surface of the base substrate;

a second electronic component electrically coupled to the first electronic component;

a wirebond to electrically couple the first electronic component to the second electronic component;

a frame member coupled to the first surface of the base substrate wherein the first and second electronic components are positioned interior of the frame member; and

a cover substrate coupled to the frame member, wherein the frame member comprises a ground path and a signal path between the base substrate and the cover substrate.

13. A semiconductor device in accordance with claim 12 , wherein the ground path of the frame member couples a ground plane in the base substrate to a ground plane in the cover substrate.

14. A semiconductor device in accordance with claim 12 , wherein a side section of the ground path is exposed at an outer surface of the frame member.

15. A semiconductor device in accordance with claim 12 , further comprising conductive plating on the frame member, the conductive plating coupled to the metal traces of the base substrate.

16. A semiconductor device in accordance with claim 15 , wherein the conductive plating is along an inner perimeter of the frame member and the ground path is along an outer perimeter of the frame member.

17. A semiconductor device in accordance with claim 16 , wherein the signal path comprises the conductive plating along an inner perimeter of the frame member.

18. A semiconductor device in accordance with claim 12 , further comprising conductive vias within the frame member, the conductive vias coupled to the metal traces in the base substrate.

19. A semiconductor device in accordance with claim 18 , wherein the signal path comprises at least one of the conductive vias within the frame member.

20. A semiconductor device in accordance with claim 12 , wherein the second electronic component is coupled to the cover substrate.

21. A semiconductor device in accordance with claim 20 , wherein the cover substrate comprises an opening under which the second electronic component is coupled.

22. A semiconductor device in accordance with claim 21 , wherein the wire bond couples the first electronic component to the second electronic component via the base substrate and the cover substrate.

23. A semiconductor device in accordance with claim 12 , wherein the second electronic component is coupled to the base substrate over an opening in the base substrate adjacent to the first electronic component.

24. A semiconductor device in accordance with claim 23 , wherein the wire bond directly couples the first electronic component to the second electronic component.

25. A semiconductor device comprising:

a base substrate comprising a plurality of metal traces and an opening;

a die coupled to a first surface of the base substrate and positioned over the opening;

a frame member coupled to the first surface of the base substrate wherein the die is positioned interior of the frame member;

a cover substrate coupled to the frame member;

conductive plating on the frame member that electrically couples the base substrate to the cover substrate; and

conductive vias within the frame member, the conductive vias coupled to the metal traces of the base substrate for communicating electrical signals between the base substrate and the cover substrate.