Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
A halogen element-containing metal material and a nitrogen-containing material are alternately supplied to a process chamber with a flow rate of an inert gas supplied to the process chamber together with the nitrogen-containing material during the supplying of the nitrogen-containing material to the process chamber being more increased than a flow rate of the inert gas supplied to the process chamber together with the metal material during the supplying of the metal material to the process chamber.
1. A method of manufacturing a semiconductor device, comprising:
supplying a halogen-containing metal material containing a metal element and a halogen element to a substrate while supplying an inert gas;
supplying a reactant gas containing a nitrogen element to the substrate while supplying the inert gas at a flow rate larger than a flow rate of the inert gas supplied during the supplying of the halogen-containing metal material;
forming a metal-containing nitride film on the substrate by performing a cycle a predetermined number of times, the cycle including:
supplying the halogen-containing metal material;
removing the halogen-containing metal material;
supplying the reactant gas; and
removing the reactant gas,
wherein a flow rate of the inert gas supplied during the supplying of the reactant gas is larger than a flow rate of the inert gas supplied during the supplying of the halogen-containing metal material, a flow rate of the inert gas supplied during the removing of the halogen-containing metal material, and a flow rate of the inert gas supplied during the removing of the reactant gas.
2. The method according to claim 1 , wherein the flow rate of the inert gas supplied during the supplying of the halogen-containing metal material is larger than the flow rate of the inert gas supplied during the removing of the halogen-containing metal material and the flow rate of the inert gas supplied during the removing of the reactant gas.
3. The method according to claim 1 , wherein, when the reactant gas is supplied, the inert gas is supplied at ½ or more of a flow rate of the reactant gas.
4. The method according to claim 1 , wherein, when the halogen-containing metal material is supplied, the inert gas is supplied at ½ or more of a flow rate of the halogen-containing metal material.
5. The method according to claim 1 , wherein the halogen element has a smaller binding energy than chlorine.
6. The method according to claim 5 , wherein the halogen element is one selected from the group consisting of iodine and bromine.