Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
View Patent ↗Provided is a configuration capable of suppressing a variation in characteristics of transistor. The configuration includes: a process chamber; a gas supply unit configured to supply a hard mask forming gas into the process chamber; a substrate support table configured to support a substrate W n of an n th lot having a film to be etched formed thereon; a heater embedded in the substrate support table; and a controller configured to control a temperature distribution of the heater based on an etching information of a substrate W m of an m th lot processed prior to the n th lot.
1. A method of manufacturing a semiconductor device comprising:
(a) placing a substrate W n of an n th lot having a film to be etched formed thereon on a substrate support accommodated in a process chamber;
(b) controlling a surface temperature distribution of the substrate W n based on an etching information of a substrate W m of an m th lot processed prior to the n th lot wherein the etching information comprises at least one of in situ information on etch rates at a center portion and a peripheral portion of a surface of the substrate W m and in situ information on widths of the film to be etched at the center portion and the peripheral portion of the surface of the substrate W m ; and
(c) supplying a hard mask forming gas into the process chamber after performing (b).
2. The method of claim 1 , wherein a hard mask film formed at a peripheral portion of a surface of the substrate W n is thicker than the hard mask film formed at a center portion of the surface of the substrate W n in (c) by controlling the surface temperature distribution of the substrate W n in (b) when the etching information indicates the etch rate at the peripheral portion of the surface of the substrate W m is greater than the etch rate at the center portion of the surface of the substrate W m .
3. The method of claim 1 , wherein a hard mask film formed at a peripheral portion of a surface of the substrate W n is thicker than the hard mask film formed at a center portion of the surface of the substrate W n in (c) by controlling the surface temperature distribution of the substrate W n in (b) when the etching information indicates the film to be etched at the peripheral portion of the surface of the substrate W m is narrower than the film to be etched at the center portion of the surface of the substrate W m .
4. The method of claim 1 , wherein a hard mask film formed at a center portion of a surface of the substrate W n is thicker than the hard mask film formed at a peripheral portion of the surface of the substrate W n in (c) by controlling the surface temperature distribution of the substrate W n in (b) when the etching information indicates the etch rate at the peripheral portion of the surface of the substrate W m is less than the etch rate at the center portion of the surface of the substrate W m .
5. The method of claim 1 , wherein a hard mask film formed at a center portion of a surface of the substrate W n is thicker than the hard mask film formed at a peripheral portion of the surface of the substrate W n in (c) by controlling the surface temperature distribution of the substrate W n in (b) when the etching information indicates the film to be etched at the peripheral portion of the surface of the substrate W m is narrower than the film to be etched at the center portion of the surface of the substrate W m .
6. The method of claim 1 , wherein a hard mask film formed by the hard mask forming gas comprises a silicon nitride film.
7. The method of claim 1 , wherein the film to be etched comprises a gate electrode layer.
8. The method of claim 2 , wherein the surface temperature distribution of the substrate W n is controlled in (b) by heating the substrate W n such that a temperature of the peripheral portion of the surface of the substrate W n is higher than that of the center portion of the surface of the substrate W n .
9. The method of claim 8 , wherein the temperature of the peripheral portion of the surface of the substrate W n when the hard mask film is formed on the substrate W n is higher than a temperature of the peripheral portion of the surface of the substrate W m when the hard mask film is formed on the substrate W m .
10. The method of claim 3 , wherein the surface temperature distribution of the substrate W n is controlled in (b) by heating the substrate W n such that a temperature of the peripheral portion of the surface of the substrate W n is higher than that of the center portion of the surface of the substrate W n .
11. The method of claim 10 , wherein the temperature of the peripheral portion of the surface of the substrate W n when the hard mask film is formed on the substrate W n is higher than a temperature of the peripheral portion of the surface of the substrate W m when the hard mask film is formed on the substrate W m .
12. The method of claim 4 , wherein the surface temperature distribution of the substrate W n is controlled in (b) by heating the substrate W n such that a temperature of the center portion of the surface of the substrate W n is higher than that of the peripheral portion of the surface of the substrate W n .
13. The method of claim 12 , wherein the temperature of the center portion of the surface of the substrate W n when the hard mask film is formed on the substrate W n is higher than a temperature of the center portion of the surface of the substrate W m when the hard mask film is formed on the substrate W m .
14. The method of claim 13 , wherein the temperature of the peripheral portion of the surface of the substrate W n when the hard mask film is formed on the substrate W n is maintained at a temperature of the peripheral portion of the surface of the substrate W m when the hard mask film is formed on the substrate W m .
15. The method of claim 5 , wherein the surface temperature distribution of the substrate W n is controlled in (b) by heating the substrate W n such that a temperature of the center portion of the surface of the substrate W n is higher than that of the peripheral portion of the surface of the substrate W n .
16. The method of claim 15 , wherein the temperature of the center portion of the surface of the substrate W n when the hard mask film is formed on the substrate W n is higher than a temperature of the center portion of the surface of the substrate W m when the hard mask film is formed on the substrate W m .
17. The method of claim 16 , wherein the temperature of the peripheral portion of the surface of the substrate W n when the hard mask film is formed on the substrate W n is maintained at a temperature of the peripheral portion of the surface of the substrate W m when the hard mask film is formed on the substrate W m .
18. A non-transitory computer-readable recording medium storing a program causing a computer to perform:
(a) placing a substrate W n of an n th lot having a film to be etched formed thereon on a substrate support accommodated in a process chamber;
(b) controlling a surface temperature distribution of the substrate W n based on an etching information of a substrate W m of an m th lot processed prior to the n th lot wherein the etching information comprises at least one of in situ information on etch rates at a center portion and a peripheral portion of a surface of the substrate W m and in situ information on widths of the film to be etched at the center portion and the peripheral portion of the surface of the substrate W m ; and
(c) supplying a hard mask forming gas into the process chamber after performing (b).