Semiconductor device and manufacturing method thereof

1. A method of manufacturing a semiconductor device, the method comprising:

connecting a semiconductor die to an interposer, the interposer comprising a redistribution layer and an inorganic dielectric layer on a semiconductor substrate;

encapsulating the semiconductor die in an encapsulant; and

removing the semiconductor substrate from the interposer.

2. The method of claim 1 , wherein the semiconductor substrate comprises a silicon substrate.

3. The method of claim 1 , wherein said removing the semiconductor substrate comprises abrading the semiconductor substrate.

4. The method of claim 3 , wherein said abrading the semiconductor substrate comprises grinding the semiconductor substrate.

5. The method of claim 1 , comprising soldering the interposer to a package substrate.

6. The method of claim 5 , comprising forming underfill between the semiconductor die and the interposer and between the interposer and the package substrate.

7. The method of claim 5 , comprising completely covering at least respective top sides of the semiconductor die, the interposer, and the package substrate with a same cover material.

8. The method of claim 1 , wherein the dielectric layer comprises at least one of: silicon oxide and/or silicon nitride.

9. The method of claim 1 , where said connecting a semiconductor die to an interposer comprises directly connecting a first conductive bump on the semiconductor die to a second conductive bump on the interposer.

10. The method of claim 1 , wherein the redistribution layer comprises conductors characterized by a submicron pitch.

11. A method of manufacturing a semiconductor device, the method comprising:

receiving an interposer comprising a redistribution layer and a dielectric layer on a substrate;

attaching a semiconductor die to the received interposer; and

after said attaching the semiconductor die, removing the substrate from the interposer, wherein said removing the substrate comprises abrading the substrate.

12. The method of claim 11 , wherein:

said abrading the substrate comprises grinding the substrate; and

said removing the substrate further comprises etching the substrate to expose at least a portion of the redistribution layer.

13. The method of claim 11 , wherein the substrate comprises a semiconductor substrate.

14. The method of claim 13 , wherein the semiconductor substrate comprise a silicon substrate.

15. The method of claim 11 , wherein the dielectric layer comprises one or both of: silicon oxide and/or silicon nitride.

16. The method of claim 11 , wherein the redistribution layer comprises conductors characterized by a submicron pitch.

17. A method of manufacturing a semiconductor device, the method comprising:

receiving an interposer, the interposer comprising:

one or both of: a semiconductor material and/or a glass;

an under bump metal;

a redistribution layer on at least a portion of the under bump metal; and

a dielectric layer;

after said receiving the interposer, coupling a semiconductor die directly to the received interposer;

encapsulating the semiconductor die with an encapsulant; and

connecting a bump to the under bump metal.

18. The method as claimed in claim 17 , wherein the redistribution layer and the dielectric layer are on a substrate, the method comprising removing the substrate from the interposer by, at least in part, abrading the substrate.

19. The method of claim 18 , wherein the substrate comprises a semiconductor material.

20. The method of claim 19 , wherein the semiconductor material comprises silicon.