Chip having register to store value that represents adjustment to output drive strength
An integrated circuit device includes a transmitter circuit including an output driver. The integrated circuit device includes a first register to store a value representative of a drive strength setting associated with the transmitter circuit such that the output driver outputs data in accordance with the drive strength setting. The integrated circuit device also includes a second register to store a value representative of an equalization setting associated with the transmitter circuit such that the output driver outputs data in accordance with the equalization setting. The integrated circuit device further includes a third register to store a value representative of a slew rate setting associated with the transmitter circuit such that the output driver outputs data in accordance with the slew rate setting.
1. A flash memory device, comprising:
an output driver coupled to a bidirectional bus via a port;
a first register to store a first value representative of a drive strength setting of the output driver, the first value to be provided by a memory controller that outputs the value onto the bidirectional bus, the first value being received from the bidirectional bus via the port; and,
a transmitter circuit including the output driver to output data using the drive strength setting, the data being output to the bidirectional bus via the port synchronously with respect to an external clock signal.
2. The flash memory device of claim 1 , wherein the first value corresponds to a count of memory devices on the bidirectional bus.
3. The flash memory device of claim 1 , wherein the drive strength setting of the output driver can be set to at least three different values.
4. The flash memory device of claim 1 , further comprising:
a second register to store a second value representative of at least one transmission parameter, the second value being received from the bidirectional bus via the port.
5. The flash memory device of claim 4 , wherein variations of the second value result in variations of a slew rate of the output driver.
6. The flash memory device of claim 5 , wherein the second value corresponds to a topology of memory devices on the bidirectional bus.
7. The flash memory device of claim 4 , wherein the second value affects at least one of transmit timing, slew rate, and equalization, of the output driver.
8. A method of operating a flash memory device, comprising:
receiving, from a bidirectional bus via a port, a first value representative of a drive strength setting of an output driver, the first value to be provided by a memory controller via the bus;
storing, in a first register, the first value; and,
outputting data, using the drive strength setting, to the bidirectional bus synchronously with respect to an external clock signal, the data output by the output driver via the port.
9. The method of claim 8 , wherein the first value is based on a count of memory devices on the bidirectional bus.
10. The method of claim 8 , wherein the drive strength setting of the output driver can be set to at least three different values.
11. The method of claim 8 , further comprising:
receiving, from the bidirectional bus via the port, a second value representative of at least one transmission parameter; and,
storing, in a second register, the second value.
12. The method of claim 11 , wherein variations of the second value result in variations of the slew rate of the output driver.
13. The method of claim 12 , wherein the second value corresponds to a topology of memory devices on the bidirectional bus.
14. The method of claim 11 , wherein the second value affects at least one of transmit timing, slew rate, and equalization, of the output driver.
15. A flash memory device, comprising:
means for driving data synchronously with respect to an external clock signal to a bidirectional bus via a port; and
means for storing a first value representative of a drive strength setting for the driving of the data, the first value to be received from the bidirectional bus via the port, the first value to be provided by a memory controller that outputs the value onto the bus.
16. The flash memory device of claim 15 , wherein the drive strength setting corresponds to a count of memory devices on the bidirectional bus.
17. The flash memory device of claim 16 , wherein the selected drive strength may be selected from at least three different values.
18. The flash memory device of claim 15 , wherein the means for storing also stores a second value representative of at least one transmission parameter, the second value being received from the bidirectional bus via the port.
19. The flash memory device of claim 18 , variations of the second value result in variations of the slew rate of the output driver means.
20. The flash memory device of claim 18 , wherein the second value affects at least one of transmit timing, slew rate, and equalization, of the output driver means.