Integrated electronic components and methods of formation thereof
Provided are integrated electronic components which include a waveguide microstructure formed by a sequential build process and an electronic device, and methods of forming such integrated electronic components. The microstructures have particular applicability to devices for transmitting electromagnetic energy and other electronic signals.
1. A microstructure for integration with an electronic component to provide thermal dissipation, the microstructure comprising:
a substrate;
a waveguide section having an outer conductor and a center conductor disposed within the outer conductor, the waveguide section having a core volume disposed between the center conductor and outer conductor;
a transition structure thermally connected between the substrate and the center conductor to dissipate heat therefrom, the transition structure comprising a thermally conductive material and an electrically isolative material; and
an electronic device coupled to the transition structure.
2. The microstructure according to claim 1 , wherein the transition structure comprises a post mechanically coupling the substrate to the center conductor.
3. The microstructure according to claim 1 , wherein the transition structure comprises a dielectric.
4. The microstructure according to claim 1 , wherein the substrate comprises silicon carbide.
5. The microstructure according to claim 1 , wherein the transition structure is disposed at an end of the center conductor.
6. The microstructure according to claim 1 , wherein the core volume comprises air.
7. The microstructure according to claim 1 , wherein the core volume comprises a vaporizing and condensing vapor.
8. The microstructure according to claim 1 , wherein the center conductor primarily comprises copper.
9. The microstructure according to claim 1 , wherein the transition structure is mechanically designed to expand and contract dimensionally with a coefficient of thermal expansion more closely resembling the substrate coefficient of thermal expansion than the coefficient of thermal expansion of the waveguide section.
10. The microstructure according to claim 1 , wherein the outer conductor has an opening disposed therein and the electronic device is disposed within the opening.
11. The microstructure according to claim 1 , wherein the electronic device is coupled at a location proximate an upper surface of the outer conductor.
12. The microstructure according to claim 1 , wherein the electronic device is mechanically coupled to the outer conductor.
13. The microstructure according to claim 1 , wherein the transition structure includes a support post electrically coupling the electronic device to the waveguide section.
14. The microstructure according to claim 13 , wherein the support post is disposed between the electronic device and the center conductor.
15. The microstructure according to claim 1 , comprising a ground plane structure proximate the electronic device to provide electrical shielding from radiation modes.
16. The microstructure according to claim 15 , comprising a plurality of waveguides electrically coupled to the electronic device by the transition structure, wherein the ground plane is configured to reduce cross talk between the waveguides.
17. The microstructure according to claim 1 , wherein the transition structure comprises a lead frame circumscribing the electronic device.
18. The microstructure according to claim 1 , wherein the transition structure comprises a plurality of lead-frame-like fingers configured to provide mechanical flexibility between the microstructure and the electronic device.