Electrostatic discharge protection device
An electrostatic discharge protection device having a P-type substrate, a common N-well formed in the P-type substrate, a common N-doped region formed in the first common N-well, wherein the common N-doped region is electrically connected to a reference voltage node. The device further has a common P-doped region formed in the common N-well, wherein the common P-doped region surrounds the common N-doped region, the common P-doped region and the common N-well form a common diode, a plurality of peripheral N-wells formed in the P-type substrate and surrounding the common N-well, each of the peripheral N-wells comprising a P-type doped region and a N-type doped region, wherein the P-type doped region is electrically connected to one of a plurality of I/O terminals, and a circular P-doped region formed in the P-type substrate and disposed between the common N-well and the peripheral N-wells, and the circular P-doped region surrounding the common N-well.
1. An electrostatic discharge protection device, comprising:
a P-type substrate set as floating;
a common N-well formed in the P-type substrate;
a common N-doped region formed in the first common N-well, wherein the common N-doped region is electrically connected to a reference voltage node;
a common P-doped region formed in the common N-well, wherein the common P-doped region surrounds the common N-doped region, the common P-doped region and the common N-well form a common diode;
a plurality of peripheral N-wells formed in the P-type substrate and surrounding the common N-well, each of the peripheral N-wells comprising a P-type doped region and a N-type doped region, wherein the P-type doped region is electrically connected to one of a plurality of I/O terminals; and
a circular P-doped region formed in the P-type substrate and disposed between the common N-well and the peripheral N-wells, and the circular P-doped region surrounding the common N-well;
wherein the common P-doped region, the circular P-doped region, and the N-type doped region are electrically connected to a bus.
2. The electrostatic discharge protection device as claimed in claim 1 , wherein a distance between any of the peripheral N-wells and the common N-well is less than 5 μm.
3. The electrostatic discharge protection device as claimed in claim 1 , wherein any of the peripheral N-wells and the P-type doped region of the any of the peripheral N-wells form a diode.
4. The electrostatic discharge protection device as claimed in claim 1 , wherein the common P-type doped region and the common N-type doped region form a common diode, when an electrostatic discharge event occurs between any of the I/O terminals and the reference voltage node, the common diode is forward-biased.
5. The electrostatic discharge protection device as claimed in claim 1 , wherein the common N-well, the P-type substrate, and any of the peripheral N-wells form a first parasitic BJT, and the P-type doped region of the any of the peripheral N-wells, the P-type doped region of the any of the peripheral N-well, and the P-type substrate form a second parasitic BJT, when an electrostatic discharge event occurs between any of the I/O terminals and the reference voltage node, the first and the second parasitic BJTs are triggered to ON.
6. The electrostatic discharge protection device as claimed in claim 1 , wherein the peripheral N-wells are symmetrically formed in the P-type substrate and the peripheral N-wells sandwich the common N-well.