Semiconductor device package and manufacturing method thereof

1. A method for making a semiconductor package, the method comprising:

receiving an interposer wafer comprising a silicon interposer die that comprises through silicon vias;

bonding and electrically connecting the silicon interposer die to a packaging substrate comprising:

a first substrate side comprising a first pad;

a second substrate side comprising a second pad; and

a conductive path connecting the first pad and the second pad;

applying a first underfill material between the silicon interposer die and the packaging substrate, wherein at least a portion of a first surface of the silicon interposer die is covered by the first underfill material and at least a second surface of the silicon interposer die is free of the first underfill material; and

bonding one or more additional die to the second surface of the silicon interposer die, wherein:

each of said one or more additional die comprises an electronic device; and

between a first of said one or more additional die and a peripheral edge of the silicon interposer die, the second surface of the silicon interposer die is planar; and

applying a second underfill material between said one or more additional die and the second surface of the silicon interposer die.

2. The method of claim 1 , wherein said bonding one or more additional die to the silicon interposer die is performed after said bonding the silicon interposer die to the packaging substrate and after said applying the first underfill material between the silicon interposer die and the packaging substrate.

3. The method of claim 1 , wherein the silicon interposer die comprises no electronic devices.

4. The method of claim 1 , wherein the second underfill material is a different type of underfill material than the first underfill material.

5. The method of claim 1 , wherein said bonding one or more additional die to the silicon interposer die comprises bonding a plurality of additional die to the silicon interposer die before said bonding the silicon interposer die to the packaging substrate.

6. The method of claim 1 , comprising

after said applying the second underfill material and before said bonding the silicon interposer die to the packaging substrate, encapsulating the one or more additional die.

7. The method of claim 1 , wherein said receiving the interposer wafer comprises receiving the interposer wafer with a protective structure comprising a wafer support structure.

8. A method for making a semiconductor package, the method comprising:

receiving an interposer wafer comprising a silicon interposer die and through silicon vias in the silicon interposer die, the through silicon vias exposed at a thinned side of the silicon interposer die;

bonding the silicon interposer die to a packaging substrate comprising:

a first substrate side comprising a first pad;

a second substrate side comprising a second pad; and

a conductive path connecting the first pad and the second pad;

applying an underfill material between the silicon interposer die and the packaging substrate; and

after said applying an underfill between the silicon interposer die and the packaging substrate, bonding one or more additional die to the silicon interposer die,

wherein:

each of said one or more additional die comprises an electronic device;

the silicon interposer die comprises no electronic devices;

said bonding the silicon interposer die to the packaging substrate comprises reflowing a first layer of solder structures; and

said bonding the one or more additional die to the silicon interposer die comprises reflowing a second layer of solder structures at a temperature that is high enough to reflow both of the first and second layers of solder structures.

9. The method of claim 8 , wherein a surface of the silicon interposer die that extends between a first of said one or more additional die and a peripheral edge of the silicon interposer die is planar.

10. The method of claim 8 , comprising, before said bonding one or more additional die to the silicon interposer die and before said applying an underfill between the silicon interposer die and the packaging substrate, bonding an initial additional die to the silicon interposer die.

11. The method of claim 8 , wherein said bonding one or more additional die to the silicon interposer die comprises bonding a plurality of additional die to the silicon interposer die.

12. The method of claim 11 , wherein said bonding a plurality of additional die to the silicon interposer die comprises:

adhering a first side of each of the plurality of additional die to an adhesive layer;

after said adhering, solder-bonding a second side of each of the adhered plurality of additional die to the silicon interposer die; and

after said bonding, removing the adhesive layer.

13. The method of claim 11 , wherein said bonding a plurality of additional die to the silicon interposer die comprises:

bonding a first of the plurality of additional die to the silicon interposer die; and

bonding a second of the plurality of additional die to the first of the plurality of additional die.

14. The method of claim 8 , wherein said bonding one or more additional die to the silicon interposer die comprises bonding a plurality of additional die to the silicon interposer die before said bonding the silicon interposer die to the packaging substrate.

15. The method of claim 8 , comprising:

applying an underfill material between the silicon interposer die and the one or more additional die; and

after said applying an underfill material between the silicon interposer die and the one or more additional die and before said bonding the silicon interposer die to the packaging substrate, encapsulating the one or more additional die.

16. The method of claim 15 , wherein at least one surface of one of the one or more additional die is exposed through an encapsulant opening after the encapsulating, and wherein the at least one surface is facing away from the silicon interposer die.

17. A method for making a semiconductor package, the method comprising:

receiving an interposer wafer comprising a plurality of interposer die, each of the plurality of interposer die comprising through vias;

dicing a first interposer die of the plurality of interposer die from the interposer wafer;

after said dicing, bonding the first interposer die to a first side of a substrate; and

bonding a plurality of additional die to a first surface of the first interposer die, wherein:

each of said plurality of additional die comprises an electronic device;

between a first of the plurality of additional die and a second of the plurality of additional die, the first surface of the first interposer die is planar; and

said bonding a plurality of additional die to the first surface of the first interposer die comprises forming an underfill material between each of the plurality of additional die and the first surface of the first interposer die; and

forming conductive package interconnection structures on a second side of the substrate.

18. The method of claim 17 , wherein said bonding a plurality of additional die to the first interposer die is performed after said bonding the first interposer die to the substrate.

19. The method of claim 17 , wherein said bonding a plurality of additional die to the first interposer die is performed before said bonding the first interposer die to the substrate.

20. The method of claim 17 , wherein said bonding a plurality of additional die to the first interposer die comprises bonding a stack of additional die to the first interposer die, and bonding a non-stacked die to the first interposer die at a position laterally displaced from the stack of additional die.