IP Library Granted Patent US 10,082,438
Granted Patent B2
US 10,082,438 · App. 14/700,424 · Granted Sep 25, 2018

Multi-sensor system and method of forming same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,082,438
App. No.
14/700,424
Granted
Sep 25, 2018
Kind
B2
Abstract

A method for forming a multi-sensor system includes forming an inertial sensor fixed electrode of an inertial sensor and a movable electrode of a pressure sensor on a first substrate having through silicon vias (TSVs). A second substrate is fusion bonded to a bonding layer on the first substrate. The second substrate and the bonding layer are patterned to form a transducer layer of the inertial sensor and a pressure sensor fixed electrode of the pressure sensor. The first substrate is etched to form a pressure sensor port aligned with the movable electrode.

Claims (19)

1. A multi-sensor system comprising:

a first substrate;

an insulating layer on the first substrate;

a pressure sensor comprising:

a movable electrode aligned with a pressure sensor port, the movable electrode being on the insulating layer, the pressure sensor port being within the first substrate, wherein the pressure sensor port extends partially through the first substrate, a pressure sensing diaphragm portion of the first substrate and a pressure sensor diaphragm portion of the insulating layer being between the pressure sensor port and the movable electrode; and

a pressure sensor fixed electrode comprising a first portion of a second substrate; and

an inertial sensor comprising:

an inertial sensor fixed electrode on the insulating layer; and

a transducer layer comprising a second portion of the second substrate.

2. The multi-sensor system of claim 1 further comprising:

vias within the first substrate, the vias being configured to provide input/output signals to the pressure sensor and the inertial sensor.

3. The multi-sensor system of claim 1 further comprising:

a third substrate sealing the inertial sensor and providing a hermetic reference cavity for the pressure sensor.

4. The multi-sensor system of claim 3 wherein the third substrate comprises a transducer layer cavity aligned with the transducer layer.

5. The multi-sensor system of claim 3 further comprising connecting structures comprising posts, the third substrate being mounted to the posts.

6. The multi-sensor system of claim 5 further comprising:

a contact layer on the posts; and

contact pads on the third substrate, the contact layer being bonded to the contact pads to thereby mount the third substrate to the posts.

7. The multi-sensor system of claim 1 further comprising a plurality of pressure sensors comprising the pressure sensor, the pressure sensors configured to measure different pressures.

Assignments (15)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040626 FRAME: 0683. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME EFFECTIVE NOVEMBER 7, 2016. Recorded Jan 12, 2017
From: NXP SEMICONDUCTORS USA, INC. (MERGED INTO); FREESCALE SEMICONDUCTOR, INC. (UNDER)
To: NXP USA, INC.
Reel/Frame 041414/0883 →
CHANGE OF NAME Recorded Nov 16, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040626/0683 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 20, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037565/0510 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 20, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037565/0527 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0859 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Aug 6, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 036284/0105 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Aug 6, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 036284/0363 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Aug 6, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 036284/0339 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 30, 2015
From: ZHANG, QING
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 035535/0994 →
Cited By (1)
US 12,624,975