Wafer-level packaging using wire bond wires in place of a redistribution layer

1. A microelectronic package, comprising:

a microelectronic die having a first surface, a second surface opposite the first surface, and a sidewall surface between the first and second surfaces;

a plurality of wire bond wires with proximal ends thereof coupled to either the first surface or the second surface of the microelectronic die with distal ends of the plurality of wire bond wires extending away from either the first surface or the second surface, respectively, of the microelectronic die;

a portion of the plurality of wire bond wires extending outside a perimeter of the microelectronic die into a fan-out (“FO”) region; and

a molding material for covering the first surface, the sidewall surface, and portions of the plurality of the wire bond wires from the first surface of the microelectronic die to an outer surface of the molding material;

wherein the plurality of wire bond wires include both first directed wire bond wires extending to the FO region and second directed wire bond wires extending to a fan-in (“FI”) region.

2. The microelectronic package according to claim 1 , further comprising:

interconnects coupled to the distal ends of the plurality of wire bond wires;

wherein a first pitch of the distal ends is at least a factor of 3 times greater than a second pitch of the proximal ends.

3. The microelectronic package according to claim 2 , further comprising:

a substrate;

wherein the second surface of the microelectronic die is coupled to an inner surface of the substrate; and

wherein the molding material covers a portion of the inner surface of the substrate associated with the FO region.

4. The microelectronic package according to claim 3 , wherein the first directed wire bond wires and the second directed wire bond wires respectively include slanted-out wire bond wires extending to the FO region and slanted-in wire bond wires extending to the region.

5. The microelectronic package according to claim 4 , wherein the plurality of wire bond wires include touch-down wire bond wires.

6. The microelectronic package according to claim 3 , wherein the plurality of wire bond wires are either ball bonded or stitch bonded to contacts of the microelectronic die.

7. The microelectronic package according to claim 3 , wherein:

the first pitch is at least approximately 300 microns for the interconnects; and

the second pitch is at most approximately 100 microns.

8. The microelectronic package according to claim 3 , wherein the plurality of wire bond wires have a thickness in a range of approximately 15 to 50 microns.

9. The microelectronic package according to claim 3 , wherein:

a die size of the microelectronic die is in a range of approximately 1-by-1 to 12-by-12 millimeters; and

a microelectronic package size associated is in a range of approximately 1-by-1 to 30-by-30 millimeters.

10. The microelectronic package according to claim 3 , wherein:

at least a majority of contacts of the microelectronic die are disposed on the first surface of the microelectronic die proximal to the perimeter thereof with no or a minority of the contacts in a central region of the first surface of microelectronic die;

the portion of the plurality of wire bond wires is a first portion thereof; and

a second portion of the plurality of wire bond wires extend over the central region of the first surface of the microelectronic die inside the perimeter of the microelectronic die into the region.

11. The microelectronic package according to claim 3 , wherein the molding material has a thickness above the first surface of the microelectronic die of at least 50 microns.

12. A package-on-package microelectronic device having a first microelectronic package and a second microelectronic package each of which is according to claim 1 , the package-on-package microelectronic device comprising:

the first microelectronic package stacked on the second microelectronic package, wherein solder masses of the first microelectronic package are coupled to a substrate of the second microelectronic package; and

the substrate of the second microelectronic package extending outside the perimeter of the microelectronic die thereof into the FO region thereof.

13. A package-on-package microelectronic device having a first microelectronic package according to claim 1 , the package-on-package microelectronic device comprising:

the first microelectronic package stacked on a second microelectronic package, wherein solder masses of the first microelectronic package are coupled to a substrate of the second microelectronic package; and

the substrate of the second microelectronic package being of a microelectronic die of the second microelectronic package.

14. A die-on-die microelectronic device having the microelectronic die according to claim 1 as a first microelectronic die and having a second microelectronic die stacked on the first microelectronic die, wherein:

each of the first microelectronic die and the second microelectronic die have a lower surface as either the first surface or the second surface thereof;

the plurality of wire bond wires have the proximal ends thereof coupled to the lower surface of each of the first microelectronic die and the second microelectronic die with distal ends of the plurality of wire bond wires extending away from the lower surface respectively of the first microelectronic die and the second microelectronic die; and

the molding material for covering the lower surface of each of the first microelectronic die and the second microelectronic die and portions of the plurality of the wire bond wires from the lower surface of each the first microelectronic die and the second microelectronic die to the outer surface of the molding material.

15. A method for wafer-level packaging, comprising:

obtaining a substrate;

attaching microelectronic dies to the substrate to form a die array of the microelectronic dies having gaps between neighboring dies of the microelectronic dies;

wire bonding proximal ends of wire bond wires to the microelectronic dies;

covering the substrate, including the die array, with a molding material;

wherein the covering includes covering at least a majority length of lengths of the wire bond wires wire bonded to the microelectronic dies;

wherein at least a portion of the wire bond wires extend outside corresponding perimeters of the microelectronic dies corresponding thereto;

revealing distal ends of the wire bond wires from the molding material;

forming interconnects for the distal ends revealed; and

dicing the die array to provide microelectronic packages.

16. The method according to claim 15 , wherein:

the substrate is a carrier wafer;

the microelectronic dies are known good dies; and

the microelectronic packages are diced from a reconstituted wafer-level package with a fan-out (“FO”) region associated with the gaps.

17. The method according to claim 15 , wherein the revealing comprises etching back the molding material to reveal the distal ends of the wire bond wires.

18. The method according to claim 15 , wherein the revealing comprises:

grinding back the molding material to the distal ends of the wire bond wires; and

etching the molding material to reveal the distal ends of the wire bond wires for the interconnects.

19. The method according to claim 15 , further comprising removing the substrate prior to the dicing.

20. The method according to claim 19 , wherein:

the covering of the substrate including the die array with the molding material comprises first covering a region of the substrate without covering upper surfaces of the microelectronic dies with the molding material;

the wire bonding of the proximal ends of the wire bond wires to the microelectronic dies is performed after the first covering; and

the covering of the substrate including the die array with the molding material comprises second covering the region of the substrate including the die array with the molding material after the wire bonding.