Semiconductor device and manufacturing method thereof
The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
1. A semiconductor integrated circuit device comprising:
a first insulating film formed over a semiconductor substrate;
a first wiring trench formed in the first insulating film;
a first metal film filled in the first wiring trench;
a second insulating film formed over the first metal film and the first insulating film;
a third insulating film formed over the second insulating film;
a fourth insulating film formed over the third insulating film;
a contact hole formed in the fourth, third and second insulating films;
a second wiring trench formed in the fourth insulating film;
a second metal film filled in the second wiring trench and the contact hole as one combined unit, such that the second metal film is connected to the first metal film; and
a conductive barrier film formed between the second metal film and the fourth insulating film,
wherein the first and second metal films include copper as a primary component,
wherein the material of the second metal film is different from the material of the conductive barrier film,
wherein the fourth insulating film has a greater thickness than the combined thicknesses of the second and third insulating films, has a lower dielectric constant than a dielectric constant of a silicon oxide film and is comprised of a material including silicon, oxygen and carbon,
wherein the first insulating film is comprised of a material including silicon, oxygen and carbon,
wherein the second insulating film is comprised of a material including nitrogen,
wherein the material of the second insulating film is different form the material of the third insulating film, and
wherein a thickness of the second insulating film is larger than a thickness of the third insulating film.
2. A semiconductor integrated circuit device according to the claim 1 ,
wherein the third insulating film does not include nitrogen.
3. A semiconductor integrated circuit device according to the claim 2 ,
wherein the third insulating film is comprised of a material including silicon and carbon.
4. A semiconductor integrated circuit device according to the claim 1 ,
wherein the second insulating film is comprised of a material including silicon, carbon and nitrogen.
5. A semiconductor integrated circuit device comprising:
a first insulating film formed over a semiconductor substrate;
a first metal film embedded in the first insulating film;
a second insulating film formed over the first metal film and the first insulating film;
a third insulating film formed over the second insulating film;
a fourth insulating film formed over the third insulating film;
a second metal film embedded in the fourth, third and second insulating films as a dual-damascene structure, such that the second metal film is connected to the first metal film; and
a conductive barrier film formed between the second metal film and the fourth insulating film,
wherein the first and second metal films include copper as a primary component,
wherein the material of the second metal film is different from the material of the conductive barrier film,
wherein the fourth insulating film has a greater thickness than the combined thicknesses of the second and third insulating films, has a lower dielectric constant than a dielectric constant of a silicon oxide film and is comprised of a material including silicon, oxygen and carbon,
wherein the first insulating film is comprised of a material including silicon, oxygen and carbon,
wherein the second insulating film is comprised of a material including silicon, carbon and nitrogen,
wherein the material of the second insulating film is different form the material of the third insulating film, and
wherein a thickness of the second insulating film is larger than a thickness of the third insulating film.
6. A semiconductor integrated circuit device according to the claim 5 ,
wherein the third insulating film does not include nitrogen.
7. A semiconductor integrated circuit device according to the claim 6 ,
wherein the third insulating film is comprised of a material including silicon and carbon.
8. A semiconductor integrated circuit device according to the claim 5 ,
wherein the second insulating film is formed of SiCN.