Semiconductor structure
View Patent ↗A semiconductor structure includes a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple discontinuous strain-releasing layers. The buffer layer is disposed on the silicon substrate. The nitride-based epitaxial structure layer is disposed on the buffer layer. The discontinuous strain-releasing layers are disposed between the silicon substrate and the nitride-based epitaxial structure layer, wherein a material of the discontinuous strain-releasing layers is silicon nitride.
1. A semiconductor structure, comprising:
a silicon substrate;
a buffer layer, disposed on the silicon substrate;
a nitride-based epitaxial structure layer, disposed on the buffer layer; and
a plurality of discontinuous strain-releasing layers, disposed between the silicon substrate and the nitride-based epitaxial structure layer, wherein a material of the discontinuous strain-releasing layers is silicon nitride.
2. The semiconductor structure as claimed in claim 1 , wherein a thickness of each of the discontinuous strain-releasing layers is lesser than 1 micrometer.
3. The semiconductor structure as claimed in claim 1 , wherein the discontinuous strain-releasing layers are located in the buffer layer.
4. The semiconductor structure as claimed in claim 1 , wherein the discontinuous strain-releasing layers are located in the nitride-based epitaxial structure layer.
5. The semiconductor structure as claimed in claim 4 , wherein the nitride-based epitaxial structure layer comprises a first nitride-based epitaxial structure layer and a second nitride-based epitaxial structure layer, and the first nitride-based epitaxial structure layer is disposed between the second nitride-based epitaxial structure layer and the buffer layer.
6. The semiconductor structure as claimed in claim 5 , wherein the first nitride-based epitaxial structure layer is an aluminum gallium nitride layer, an aluminum nitride/gallium nitride super lattice structure layer or an aluminum indium gallium nitride layer, and the second nitride-based epitaxial structure layer is a gallium nitride layer.
7. The semiconductor structure as claimed in claim 5 , wherein the discontinuous strain-releasing layers are disposed in the first nitride-based epitaxial structure layer, and two adjacent discontinuous strain-releasing layers are spaced apart by a distance.
8. The semiconductor structure as claimed in claim 5 , wherein the discontinuous strain-releasing layers are disposed in the second nitride-based epitaxial structure layer, and two adjacent discontinuous strain-releasing layers are spaced apart by a distance.
9. The semiconductor structure as claimed in claim 5 , wherein one of the discontinuous strain-releasing layers is disposed in the first nitride-based epitaxial structure layer, and another one of the discontinuous strain-releasing layers is disposed in the second nitride-based epitaxial structure layer, and the discontinuous strain-releasing layer located in the first nitride-based epitaxial structure layer and the discontinuous strain-releasing layer located in the second nitride-based epitaxial structure layer are spaced apart by a distance.
10. The semiconductor structure as claimed in claim 5 , wherein the discontinuous strain-releasing layers are simultaneously disposed in the buffer layer, the first nitride-based epitaxial structure layer and the second nitride-based epitaxial structure layer, and two adjacent discontinuous strain-releasing layers are spaced apart by a distance.
11. The semiconductor structure as claimed in claim 1 , wherein one of the discontinuous strain-releasing layers is located in the nitride-based epitaxial structure layer, and another one of the discontinuous strain-releasing layers is located in the buffer layer, and the discontinuous strain-releasing layer located in the nitride-based epitaxial structure layer and the discontinuous strain-releasing layer located in the buffer layer are spaced apart by a distance.