IP Library Granted Patent US 9,184,360
Granted Patent B2
US 9,184,360 · App. 14/715,581 · Granted Nov 10, 2015

Light-emitting device

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Quick Facts
Patent No.
US 9,184,360
App. No.
14/715,581
Granted
Nov 10, 2015
Kind
B2
Abstract

A light-emitting device of the invention includes a base, at least one light-emitting element, a wavelength transferring cover and a heat-conducting structure. The light-emitting element is disposed on the base and electrically connected to the base. The wavelength transferring cover is disposed on the base and covers the light-emitting element. The heat-conducting structure is disposed on the base and directly contacts the wavelength transferring cover.

Claims (55)

1. A light-emitting device, comprising:

a base;

a wavelength converting structure, comprising:

a heat-conducting structure comprising a plurality of accommodating spaces; and

a wavelength converting material filled in the accommodating spaces; and

at least one light-emitting element disposed on the base, wherein the base is connected to the heat-conducting structure, and the wavelength converting structure covers the light-emitting element.

2. The light-emitting device as claimed in claim 1 , wherein material of the heat-conducting structure is selected from the group consisting of silver, gold, copper, platinum, tin, aluminium, carbon nanotube, graphene and combinations thereof.

3. The light-emitting device as claimed in claim 1 further comprising:

a heat-dissipating base, wherein the base is disposed on the heat-dissipating base.

4. The light-emitting device as claimed in claim 3 , wherein material of the heat-dissipating base is selected from the group consisting of aluminium, tin, copper, silver, gold, ceramic and combinations thereof.

5. The light-emitting device as claimed in claim 1 further comprising:

a reflective material layer, disposed on the heat-conducting structure.

6. The light-emitting device as claimed in claim 5 , wherein material of the reflective material layer is selected from the group consisting of silver, chromium, nickel, aluminium and combinations thereof.

7. The light-emitting device as claimed in claim 5 , wherein the reflective material layer is a distributed Bragg reflector (DBR).

8. The light-emitting device as claimed in claim 1 , wherein the wavelength converting material occupies 60%-95% of the surface of the wavelength converting structure.

9. A light-emitting device, comprising:

a base having at least one light-emitting element mounted thereon;

a heat-conducting meshed frame connected to the base; and

a plurality of wavelength converting blocks embedded in meshes of the heat-conducting meshed frame, the wavelength converting blocks and the heat-conducting meshed frame covering the light-emitting element.

10. The light-emitting device as claimed in claim 9 , wherein material of the heat-conducting meshed frame is selected from the group consisting of silver, gold, copper, platinum, tin, aluminium, carbon nanotube, graphene and combinations thereof.

11. The light-emitting device as claimed in claim 9 further comprising:

a heat-dissipating base, wherein the base is disposed on the heat-dissipating base.

12. The light-emitting device as claimed in claim 11 , wherein material of the heat-dissipating base is selected from the group consisting of aluminium, tin, copper, silver, gold, ceramic and combinations thereof.

13. The light-emitting device as claimed in claim 9 further comprising:

a reflective material layer, disposed on the heat-conducting meshed frame.

14. The light-emitting device as claimed in claim 13 , wherein material of the reflective material layer is selected from the group consisting of silver, chromium, nickel, aluminium and combinations thereof.

15. The light-emitting device as claimed in claim 13 , wherein the reflective material layer is a DBR.

16. A light-emitting device, comprising:

a base having at least one light-emitting element mounted thereon;

a wavelength converting layer; and

a light-transmissive and heat-conducting body connected to the base, wherein the wavelength converting layer is carried and covered by the heat-conducting body, and the wavelength converting layer and the heat-conducting body cover the light-emitting element.

17. The light-emitting device as claimed in claim 16 , wherein material of the heat-conducting body is selected from the group consisting of silver, gold, copper, platinum, tin, aluminium, carbon nanotube, graphene and combinations thereof.

18. The light-emitting device as claimed in claim 16 further comprising:

a heat-dissipating base, wherein the base is disposed on the heat-dissipating base.

19. The light-emitting device as claimed in claim 18 , wherein material of the heat-dissipating base is selected from the group consisting of aluminium, tin, copper, silver, gold, ceramic and combinations thereof.

20. The light-emitting device as claimed in claim 16 further comprising:

a reflective material layer, disposed on the heat-conducting body.

21. The light-emitting device as claimed in claim 20 , wherein material of the reflective material layer is selected from the group consisting of silver, chromium, nickel, aluminium and combinations thereof.

22. The light-emitting device as claimed in claim 20 , wherein the reflective material layer is a distributed Bragg reflector (DBR).

23. A light-emitting device, comprising:

a light emitting base;

a wavelength converting material covering the light emitting base; and

a reflective and heat-conducting body connecting the light emitting base and the wavelength converting material, and the reflective and heat-conducting body being light-transmissive.

24. The light-emitting device as claimed in claim 23 , wherein the light emitting base comprises:

a base; and

at least one light-emitting element disposed on the base, wherein the base is connected to the carrier, and the wavelength converting material and the carrier cover the light-emitting element.

25. The light-emitting device as claimed in claim 23 , wherein material of the carrier is selected from the group consisting of silver, gold, copper, platinum, aluminium, carbon nanotube, graphene and combinations thereof.

26. The light-emitting device as claimed in claim 23 further comprising:

a heat-dissipating base, wherein the light emitting base is disposed on the heat-dissipating base.

27. The light-emitting device as claimed in claim 26 , wherein material of the heat-dissipating base is selected from the group consisting of aluminium, tin, copper, silver, gold, ceramic and combinations thereof.

28. The light-emitting device as claimed in claim 23 further comprising:

a reflective material layer, disposed on the carrier.

29. The light-emitting device as claimed in claim 28 , wherein material of the reflective material layer is selected from the group consisting of silver, chromium, nickel, aluminium and combinations thereof.

30. The light-emitting device as claimed in claim 28 , wherein the reflective material layer is a DBR.

31. The light-emitting device as claimed in claim 23 , wherein the carrier occupies 5-40% of the surface area of the wavelength converting cover.

Assignments (2)
ADDRESS CHANGE REGISTRATION FORM Recorded Dec 15, 2023
From: GENESIS PHOTONICS INC.
To: GENESIS PHOTONICS INC.
Reel/Frame 066044/0133 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2023
From: GENESIS PHOTONICS INC.
To: NICHIA CORPORATION
Reel/Frame 066044/0807 →