Method of manufacturing semiconductor device and substrate processing apparatus
There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
1. A method of manufacturing a semiconductor device by simultaneously supplying a first source gas and a second source gas into a processing chamber to form a film on a substrate placed in the processing chamber, the method comprising:
(a) supplying the second source gas into the processing chamber at a second flow rate while supplying the first source gas into the processing chamber at a first flow rate to form a first film on the substrate;
(b) supplying the second source gas into the processing chamber at a fourth flow rate lower than the second flow rate while supplying the first source gas into the processing chamber at a third flow rate lower than the first flow rate to form a second film on the substrate;
(c) supplying the second source gas into the processing chamber at a fifth flow rate greater than the second flow rate while supplying the first source gas into the processing chamber at the third flow rate to form a third film on the substrate; and
(d) supplying the second source gas into the processing chamber at the fourth flow rate while supplying the first source gas into the processing chamber at the third flow rate to form a fourth film on the substrate,
wherein the step (a) through the step (d) are sequentially performed.
2. The method of claim 1 , further comprising:
(e) removing the first source gas and the second source gas from the processing chamber.
3. The method of claim 1 , wherein the film comprises one selected from a group consisting of HfO, HfON, HfSiO, HfSiON, HfAlO, HfAlON, ZrO, AlO, and AlN film.
4. The method of claim 1 , wherein the first source gas comprises at least one selected from a group consisting of Ti, Al, Si, Ta, Cu, Mu, Ru, W, Ge, Sb, Te, Hf, and Zr.
5. The method of claim 1 , wherein the second source gas comprises one selected from a group consisting of an oxygen-containing gas and a nitrogen-containing gas.
6. The method of claim 1 , wherein the second source gas comprises one selected from a group consisting of N 2 , N 2 O, CH 6 N 2 , O 2 , O 3 , H 2 O, H 2 O 2 , NH 3 , and H 2 .