Insulated gate bipolar transistor (IGBT) and related methods
An insulated gate bipolar transistor (IGBT) includes a gate trench, an emitter trench, and an electrically insulative layer coupled to the emitter trench and the gate trench and electrically isolating the gate trench from an electrically conductive layer. A contact opening in the electrically insulative layer extends into the emitter trench and the electrically conductive layer electrically couples with the emitter trench therethrough. A P surface doped (PSD) region and an N surface doped (NSD) region are each located between the electrically conductive layer and a plurality of semiconductor layers of the IGBT and between the gate trench and the emitter trench. The electrically conductive layer electrically couples to the plurality of semiconductor layers through the PSD region and/or the NSD region.
1. An insulated gate bipolar transistor (IGBT), comprising: a gate trench; an emitter trench; an electrically insulative layer coupled to the emitter trench and to the gate trench and electrically isolating the gate trench from an electrically conductive layer, and; an opening in the electrically insulative layer that extends into the emitter trench and extends into a doped semiconductor layer located between the emitter trench and the gate trench; wherein the electrically conductive layer electrically couples with the emitter trench through the opening in the electrically insulative layer; and wherein the gate trench, the emitter trench, the electrically insulative layer and the electrically conductive layer form at least a part of the insulated gate bipolar transistor (IGBT).
2. The IGBT of claim 1 , further comprising a P surface doped (PSD) region and an N surface doped (NSD) region located between the electrically conductive layer and a plurality of semiconductor layers of the IGBT.
3. The IGBT of claim 2 , wherein the PSD region and the NSD region substantially do not overlap.
4. The IGBT of claim 2 , wherein the PSD region and the NSD region are located between the gate trench and the emitter trench and wherein the electrically conductive layer is electrically coupled to the plurality of semiconductor layers through one of the PSD region and the NSD region.
5. The IGBT of claim 1 , wherein the IGBT further comprises a plurality of semiconductor layers comprising at least a P+layer, a P−layer, and an N−layer between the P+layer and the P−layer.
6. The IGBT of claim 5 , further comprising an N+layer between the P+layer and the N−layer.
7. The IGBT of claim 1 , wherein the gate trench and the emitter trench each extends into at least two semiconductor layers of the IGBT.
8. The IGBT of claim 1 , wherein the gate trench is electrically insulated from a plurality of semiconductor layers of the IGBT using an insulator.
9. The IGBT of claim 1 , wherein the IGBT further comprises a plurality of semiconductor layers and wherein the emitter trench is not electrically coupled with the plurality of semiconductor layers except through the electrically conductive layer.
10. The IGBT of claim 2 , wherein the opening in the electrically insulative layer contacts an upper edge of the PSD region and contacts a side of the NSD region.