Discontinuous patterned bonds for semiconductor devices and associated systems and methods
Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
1. A bonded assembly, comprising:
a device substrate carrying a plurality of solid-state transducers and a first bond metal, wherein the device substrate includes a plurality of trenches separating individual solid-state transducers from one another, and wherein the plurality of trenches separate the first bond metal into a plurality of sections, with individual sections of the first bond metal positioned in contact with corresponding individual solid-state transducers; and
a carrier substrate carrying a second bond metal, wherein the second bond metal is bonded to the first bond metal via a discontinuous bond, and wherein the second bond metal extends uninterrupted across multiple individual trenches separating corresponding solid-state transducers.
2. The bonded assembly of claim 1 wherein the discontinuous bond includes a plurality of bond segments, individual bond segments comprising individual sections of the first bond metal bonded to corresponding individual sections of the second bond metal.
3. The bonded assembly of claim 1 wherein the plurality of trenches include void space between neighboring solid-state transducers.
4. The bonded assembly of claim 1 wherein the plurality of trenches include gaps between the device substrate and the second bond metal.
5. The bonded assembly of claim 1 wherein the plurality of trenches include discontinuities in the discontinuous bond.
6. The bonded assembly of claim 1 wherein the second bond metal extends uninterrupted across the carrier substrate.
7. The bonded assembly of claim 1 wherein the plurality of solid-state transducers and the plurality of trenches form an inverted waffle pattern.
8. The bonded assembly of claim 1 wherein the plurality of solid-state transducers comprise light-emitting diodes.
9. A semiconductor device, comprising:
a device assembly including:
a first substrate,
a plurality of solid-state transducers positioned on the first substrate, wherein individual solid-state transducers are separated from one another by a plurality of trenches forming a grid pattern, and
a plurality of sections of a first bond metal, wherein individual sections of the first bond metal are attached to corresponding individual solid-state transducers, and wherein the individual solid-state transducers are positioned between the first substrate and corresponding individual sections of the first bond metal; and
a carrier assembly including:
a second substrate, and
a second bond metal attached to the second substrate, wherein the second bond metal extends uninterrupted across multiple individual trenches separating corresponding solid-state transducers, and wherein the second bond metal is bonded to the plurality of sections of the first bond metal to form a discontinuous bond.
10. The semiconductor device of claim 9 wherein the plurality of trenches include voids positioned between the first substrate and the second bond metal.
11. The semiconductor device of claim 10 wherein the voids include discontinuities in the discontinuous bond.
12. The semiconductor device of claim 9 wherein the plurality of solid-state transducers comprise light-emitting diodes.
13. The semiconductor device of claim 9 wherein the trenches extend from the first substrate to the second bond metal.
14. The semiconductor device of claim 9 wherein the first bond metal and the second bond metal form a bond metal structure, and wherein the plurality of trenches form a grid pattern in the bond metal structure.
15. A semiconductor device, comprising:
a carrier substrate having a plurality of projections, the plurality of projections forming a grid pattern and defining a plurality of recessed portions; and
a device substrate carrying a plurality of solid-state transducers, wherein the device substrate is bonded to the carrier substrate via a bond metal forming a discontinuous bond, wherein individual solid-state transducers are positioned within corresponding individual recesses of the carrier substrate, and wherein the discontinuous bond comprises a plurality of bond segments, individual bond segments bonding corresponding individual solid-state transducers to the carrier substrate.
16. The semiconductor device of claim 15 wherein individual solid-state transducers are separated from one another by a plurality of trenches forming a grid pattern, and wherein the plurality of projections are positioned within the plurality of trenches.
17. The semiconductor device of claim 15 wherein the plurality of projections are positioned adjacent to the device substrate.
18. The semiconductor device of claim 15 wherein individual projections are positioned between corresponding individual bond segments.
19. The semiconductor device of claim 15 wherein individual bond segments are positioned within corresponding individual recesses and are enclosed by corresponding projections, by the carrier substrate, and by corresponding solid-state transducers.
20. The semiconductor device of claim 15 wherein the plurality of solid-state transducers are rectangular, and wherein individual solid-state transducers are adjacent to corresponding projections on four sides.