Dual liner silicide

1. A method for fabricating a dual silicide device, comprising:

growing source and drain regions adjacent to a gate structure for an N-type device;

forming a protection layer over the gate structure and the source and drain regions of the N-type device;

growing source and drain regions adjacent to a gate structure for a P-type device;

conformally depositing a first dielectric layer on the gate structure for the N-type device and the gate structure for P-type device;

removing the first dielectric layer to expose the source and drain regions adjacent to the gate structure for the P-type device;

siliciding exposed source and drain regions adjacent to the gate structure for the P-type device to form a silicided liner for the P-type device;

conformally depositing a second dielectric layer on the gate structure for the N-type device and the gate structure for P-type device;

forming a dielectric fill over the second dielectric layer;

opening contact holes in the dielectric fill and through the second dielectric layer to expose the silicided liner for the P-type device and expose the protection layer for the N-type device;

exposing the source and drain regions adjacent to the gate structure for the N-type device by opening the protection layer;

siliciding exposed source and drain regions adjacent to the gate structure for the N-type device to form a silicided liner for the N-type device; and

forming contacts in the contact holes down to the silicided liners of the P-type device and the N-type device.

2. The method as recited in claim 1 , wherein the gate structure for the N-type device and the P-type device is formed by:

forming a dummy dielectric on a substrate;

patterning dummy gate structures on the dummy dielectric;

depositing a spacer dielectric over the P-type device and over the N-type device;

etching the spacer dielectric over the N-type device to form spacers;

etching the spacer dielectric over the P-type device to form spacers;

removing the dummy gate structures to expose the substrate and form openings;

forming a gate dielectric on the substrate in the openings; and

forming a gate conductor on the gate dielectric in the openings.

3. The method as recited in claim 2 , wherein removing the dummy gate structures includes:

recessing the first dielectric layer to expose top portions of the spacers; and

exposing and removing the dummy gate structures to form the openings.

4. The method as recited in claim 3 , wherein recessing the first dielectric layer to expose top portions of the spacers includes:

depositing an organic planarizing layer over the spacers;

recessing the organic planarizing layer to a height along the spacers; and

etching the first dielectric layer above the height.

5. The method as recited in claim 4 , further comprising removing the organic planarizing layer by an ash process wherein the source and drain regions of the P-type device are protected from the ash process by the second dielectric layer and the source and drain regions of the N-type device are protected from the ash process by the second dielectric layer and the protection layer.

6. The method as recited in claim 1 , wherein the second dielectric layer includes a high-k dielectric material.

7. The method as recited in claim 1 , wherein the source and drain regions adjacent to the gate structure for the P-type device include a horizontal surface and a vertical surface and the step of siliciding exposed source and drain regions adjacent to the gate structure for the P-type device includes forming the silicided liner for the P-type device along the horizontal and vertical surfaces and protecting a portion of the horizontal surface and the vertical surface with the second dielectric layer.

8. The method as recited in claim 1 , wherein the source and drain regions adjacent to the gate structure for the N-type device include a horizontal surface and a vertical surface and the step of siliciding exposed source and drain regions adjacent to the gate structure for the N-type device includes forming the silicided liner for the N-type device along a portion of the horizontal surface and protecting the remainder of the horizontal surface and the vertical surface with the protection layer.

9. A method for fabricating a dual silicide device, comprising: forming spacers on dummy gate structures;

growing source and drain regions adjacent to the spacers for an N-type device;

forming a protection layer over the spacers and the source and drain regions of the N-type device;

growing source and drain regions adjacent to the spacers for a P-type device;

conformally depositing a first dielectric layer on the spacers for the N-type device and the spacers for P-type device;

recessing the first dielectric layer to expose top portions of the spacers;

exposing and removing the dummy gate structures to form gate openings;

forming gate dielectric and gate conductors in the gate openings;

removing the first dielectric layer to expose the source and drain regions adjacent to the spacers for the P-type device;

siliciding exposed source and drain regions adjacent to the spacers for the P-type device to form a silicided liner for the P-type device;

conformally depositing a second dielectric layer on the spacers for the N-type device and the spacers for P-type device;

forming a flowable dielectric over the second dielectric layer;

opening contact holes in the flowable dielectric and through the second dielectric layer to expose the silicided liner for the P-type device;

exposing the source and drain regions adjacent to the spacers for the N-type device by opening the protection layer;

siliciding exposed source and drain regions adjacent to the spacers for the N-type device to form a silicided liner for the N-type device; and

forming contacts in the contact holes down to the silicided liners of the P-type device and the N-type device.

10. The method as recited in claim 9 , wherein forming spacers on dummy gate structures includes:

forming a dummy dielectric on a substrate;

patterning the dummy gate structures on the dummy dielectric;

depositing a spacer dielectric over the P-type device and over the N-type device;

etching the spacer dielectric over the N-type device to form spacers; and

etching the spacer dielectric over the P-type device to form spacers.

11. The method as recited in claim 10 , wherein recessing the first dielectric layer to expose top portions of the spacers includes:

depositing an organic planarizing layer over the spacers;

recessing the organic planarizing layer to a height along the spacers; and

etching the first dielectric layer above the height.

12. The method as recited in claim 11 , further comprising removing the organic planarizing layer by an ash process wherein the source and drain regions of the P-type device are protected from the ash process by the second dielectric layer and the source and drain regions of the N-type device are protected from the ash process by the second dielectric layer and the protection layer.

13. The method as recited in claim 9 , wherein the second dielectric layer includes a high-k dielectric material.

14. The method as recited in claim 9 , wherein the source and drain regions adjacent to the spacers for the P-type device include a horizontal surface and a vertical surface and the step of siliciding exposed source and drain regions adjacent to the spacers for the P-type device includes forming the silicided liner for the P-type device along the horizontal and vertical surfaces and protecting a portion of the horizontal surface and the vertical surface with the second dielectric layer.

15. The method as recited in claim 9 , wherein the source and drain regions adjacent to the spacers for the N-type device include a horizontal surface and a vertical surface and the step of siliciding exposed source and drain regions adjacent to the spacers for the N-type device includes forming the silicided liner for the N-type device along a portion of the horizontal surface and protecting the remainder of the horizontal surface and the vertical surface with the protection layer.