IP Library Granted Patent US 9,735,023
Granted Patent B2
US 9,735,023 · App. 14/745,551 · Granted Aug 15, 2017

Methods for manufacturing block copolymer compositions and articles manufactured therefrom

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Quick Facts
Patent No.
US 9,735,023
App. No.
14/745,551
Granted
Aug 15, 2017
Kind
B2
Abstract

Disclosed herein is a composition comprising a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the weight percent based on total solids of the first block of the second block copolymer is greater than that of the first block of the first block copolymer; where the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate.

Claims (23)

1. A composition comprising:

a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block;

a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the weight percent based on total solids of the first block of the second block copolymer is greater than that of the first block of the first block copolymer;

where the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate; where the second block copolymer phase separates into a second morphology of cylindrical, lamellar or spherical domains when singly disposed on a substrate; and where the first morphology and the second morphology are different; and

a first polymer that is chemically the same as or similar to the first block of the first block copolymer and to the first block of the second block copolymer; and

a second polymer that is chemically the same as or similar to the second block of the first block copolymer and to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.

2. The composition of claim 1 , where the first polymer is chosen from a homopolymer or random copolymer.

3. The composition of claim 1 , where the first and the second polymer are homopolymers.

4. The composition of claim 1 , where the first polymer and the second polymer are present in a combined amount of less than 40 wt % based on total solids of the composition.

5. The composition of claim 1 , where the first block of the first block copolymer comprises a polystyrene, a poly(meth)acrylate, a polyolefin, a polyacrylic, a polycarbonate, a polyester, a polyamide, a polyamideimide, a polyvinyl ether, a polyvinyl thioether, a polyvinyl alcohol, a polyurea, a poly(vinyl pyridine), a poly(vinyl imidazole), a poly(vinyl pyrazole), or a combination thereof.

6. The composition of claim 1 , where the first block of the first block copolymer comprises polystyrene or polymethylmethacrylate and where the second block of the first block copolymer comprises polydimethylsiloxane.

7. The composition of claim 1 , where the second block of the first block copolymer comprises a structure represented by formula (1)

wherein each R is independently a C 1 -C 10 alkyl, a C 3 -C 10 cycloalkyl, a C 6 -C 14 aryl, a C 7 -C 13 alkylaryl or a C 7 -C 13 arylalkyl and where a degree of polymerization n in the formula (1) is 10 to 5,000.

8. The composition of claim 1 , where the composition comprises cylindrical and/or lamellar domains and has an interdomain spacing of less than or equal to about 25 nanometers after being cast on the substrate and being annealed at a temperature above the glass transition temperature and below the order-disorder transition temperature and the decomposition temperature.

9. The method of forming a pattern comprising:

disposing upon a substrate a composition comprising:

a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block;

a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the weight percent based on total solids of the first block of the second block copolymer is greater than that of the first block of the first block copolymer; where the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate; where the second block copolymer phase separates into a second morphology of cylindrical, lamellar or spherical domains when singly disposed on a substrate; and where the first morphology and the second morphology are different; and

a first polymer that is chemically the same as or similar to the first block of the first block copolymer and to the first block of the second block copolymer; and

a second polymer that is chemically the same as or similar to the second block of the first block copolymer and to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.;

annealing the substrate; and

removing a portion of the composition to form a pattern.

10. The method of claim 9 , where the substrate comprises a pattern that directs the composition to form lamellar or cylindrical domains registered to the pattern on the substrate after annealing.

Assignments (7)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF LEGAL ENTITY Recorded Sep 17, 2024
From: DDP SPECIALTY ELECTRONIC MATERIALS US, INC
To: DDP SPECIALTY ELECTRONIC MATERIALS US, LLC
Reel/Frame 068972/0210 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2024
From: DOW GLOBAL TECHNOLOGIES LLC
To: THE DOW CHEMICAL COMPANY
Reel/Frame 068971/0226 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2024
From: THE DOW CHEMICAL COMPANY
To: DDP SPECIALTY ELECTRONIC MATERIALS US, INC
Reel/Frame 068971/0362 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 17, 2016
From: ZHANG, JIEQIAN; TREFONAS, PETER, III; LI, MINGQI
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 040027/0716 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 17, 2016
From: HUSTAD, PHILLIP D.; GINZBURG, VALERIY V.; WEINHOLD, JEFFREY D.
To: DOW GLOBAL TECHNOLOGIES LLC
Reel/Frame 040027/0858 →