Image sensor with high dynamic range and method

1. An image sensor comprising a pixel array, each pixel of said pixel array comprising:

a photodetector formed in a semiconductor substrate and having a charge collection region for receiving photocharge representative of incident light;

a sink device formed in said semiconductor substrate and adjacent to said charge collection region having a gate overlying and insulated from said semiconductor substrate and receiving a responsivity control signal, and having a drain receiving said responsivity control signal; and

a readout circuit for transferring said photocharge collected by said charge collection region of said photodetector to an output in response to a select signal,

wherein the image sensor further comprises:

a timing and control circuit coupled to said pixel array, wherein said timing and control circuit provides different responsivity control signals to respective groups of pixels in said pixel array.

2. The image sensor of claim 1 wherein said sink device is on a first side of said charge collection region and said readout circuit is on a second side of said charge collection region opposite said first side.

3. The image sensor of claim 1 further comprising:

a variable voltage source for providing said responsivity control signal in response to a measured illumination level.

4. The image sensor of claim 1 wherein:

said incident light comprises light incident upon a back surface of said semiconductor substrate.

5. The image sensor of claim 1 wherein:

said photodetector comprises a buried photodiode.

6. The image sensor of claim 5 wherein:

said buried photodiode comprises a pinned photodiode.

7. The image sensor of claim 1 wherein said readout circuit comprises:

a transfer gate adjacent to said photodetector and formed in a front surface of said semiconductor substrate and insulated from said front surface of said semiconductor substrate, for forming a conductive channel from said charge collection region to a floating diffusion; and

a source follower transistor having a drain coupled to a power supply voltage terminal, a gate coupled to said floating diffusion, and a source for providing a pixel output signal.

8. The image sensor of claim 1 , wherein said respective groups of pixels comprise rows of pixels.

9. The image sensor of claim 1 , wherein said respective groups of pixels comprise columns of pixels.

10. The image sensor of claim 1 , wherein said respective groups of pixels comprise regions of pixels.

11. The image sensor of claim 1 , further comprising:

an image processor having an input coupled to said output of said readout circuit, wherein said image sensor determines respective intensities of light of said group of pixels and a second group of pixels and provides respective illumination level signals in response,

wherein said timing and control circuit provides said different responsivity control signals in response to said respective illumination level signals.

12. A method for converting incident light into an electrical signal, comprising:

collecting a first charge in a charge collection region of a first pixel in response to said incident light;

diverting a portion of said first charge to a first drain in response to a level of a first responsivity control signal;

biasing said first drain using said first responsivity control signal;

generating said first responsivity control signal in response to an intensity of light of a first group of pixels including said first pixel;

collecting a second charge in a charge collection region of a second pixel in response to said incident light;

diverting a portion of said second charge to a second drain in response to a level of a second responsivity control signal;

biasing said second drain using said second responsivity control signal;

generating said second responsivity control signal different from said first responsivity control signal in response to an intensity of light of a second group of pixels including said second pixel; and

reading out remaining charge from each of said charge collection regions of said first and second pixels.

13. The method of claim 12 wherein said reading out comprises:

transferring said remaining charge of said charge collection region of said first pixel to a floating diffusion; and

providing a voltage on an output line in response to said charge in said floating diffusion.

14. The method of claim 13 wherein said reading out further comprises:

resetting a voltage of said floating diffusion to a predetermined voltage prior to said diverting.

15. The method of claim 14 , wherein said reading out further comprises:

sampling a voltage on said floating diffusion after said resetting;

sampling said voltage on said floating diffusion after reading out said remaining charge; and

subtracting said voltage on said floating diffusion after said resetting from said voltage on said floating diffusion after reading out said remaining charge to form a pixel output signal.

16. The method of claim 12 , wherein generating said first responsivity control signal in response to said intensity of light of said first group of pixels including said first pixel comprises generating said first responsivity control signal in response to an intensity of light of a row of pixels.

17. The method of claim 12 , wherein generating said first responsivity control signal in response to said intensity of light of said first group of pixels including said first pixel comprises generating said first responsivity control signal in response to an intensity of light of a column of pixels.

18. The method of claim 12 , wherein generating said first responsivity control signal in response to said intensity of light of said first group of pixels including said first pixel comprises generating said first responsivity control signal in response to an intensity of light of a region of pixels.