Composite polishing layer chemical mechanical polishing pad

1. A chemical mechanical polishing pad, comprising:

a polishing layer having a polishing surface, a base surface and an average thickness, T P-avg , measured normal to the polishing surface from the base surface to the polishing surface;

wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second continuous non-fugitive polymeric phase;

wherein the first continuous non-fugitive polymeric phase has a plurality of interconnected periodic recesses having an average recess depth, D avg , from the polishing surface measured normal to the polishing surface from the polishing surface toward the base surface;

wherein the average recess depth, D avg , is less than the average thickness, T P-avg ;

wherein the plurality of interconnected periodic recesses are occupied with the second continuous non-fugitive polymeric phase;

wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %;

wherein the first continuous non-fugitive polymeric phase has a plurality of hollow core polymeric materials; wherein the plurality of hollow core polymeric materials is incorporated in the first continuous non-fugitive polymeric phase at 1 to 58 vol %;

wherein the second continuous non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %;

wherein the second continuous non-fugitive polymeric phase occupying the plurality of interconnected periodic recesses has an average height, H avg , measured normal to the polishing surface from the base surface of the polishing layer toward the polishing surface;

wherein an absolute value of a difference, ΔS, between the average thickness, T P-avg , and the average height, H avg , is ≦0.5 μm; and, wherein the polishing surface is adapted for polishing a substrate.

2. The chemical mechanical polishing pad of claim 1 , wherein the plurality of interconnected periodic recesses is a group of at least two concentric recesses and wherein the average recess depth, D avg , is ≧15 mils, a width of ≧5 mils and a pitch of ≧10 mils.

3. The chemical mechanical polishing pad of claim 1 , wherein the plurality of interconnected periodic recesses is a group of at least two cross-hatched recesses.

4. The chemical mechanical polishing pad of claim 1 , further comprising:

at least one groove formed in the polishing layer at the polishing surface; wherein the at least one groove has a groove depth, G depth , from the polishing surface measured in a direction normal to the polishing surface from the polishing surface toward the base surface; wherein an average groove depth, G depth-avg ; is <the average recess depth, D avg , of the plurality of interconnected periodic recesses.

5. The chemical mechanical polishing pad of claim 4 , wherein the at least one groove is a group of at least two concentric grooves.

6. The chemical mechanical polishing pad of claim 4 , wherein the at least one groove is at least one spiral groove.

7. The chemical mechanical polishing pad of claim 4 , wherein the at least one groove is provided in a cross hatch pattern.

8. A method of polishing a substrate, comprising:

providing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;

providing a chemical mechanical polishing pad according to claim 1 ;

creating dynamic contact between the polishing surface of the polishing layer and the substrate to polish a surface of the substrate; and,

conditioning of the polishing surface with an abrasive conditioner.