Contact structure of semiconductor device
The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a dielectric layer coating the sidewalls and bottom of the opening, wherein the dielectric layer has a thickness ranging from 1 nm to 10 nm; and a metal layer filling a coated opening of the dielectric layer.
1. A method of fabricating a semiconductor device, the method comprising:
forming a conductive region on a substrate;
forming a first dielectric layer over the substrate;
forming an opening in the first dielectric layer, at least a portion of the conductive region being exposed in the opening;
forming a first metal layer along a bottom of the opening;
converting the first metal layer to a second dielectric layer; and
forming a second metal layer over the second dielectric layer, the second dielectric layer being interposed between the conductive region and the second metal layer.
2. The method of claim 1 , further comprising:
forming a trench in the substrate; and
forming the conductive region in the trench, wherein the conductive region has a different lattice constant than a lattice constant of the substrate.
3. The method of claim 1 , wherein the conductive region comprises a source/drain region.
4. The method of claim 1 , wherein the converting comprises exposing the first metal layer to an oxygen-containing environment, the exposing forming an oxygen-containing film over the first metal layer.
5. The method of claim 4 , wherein the oxygen-containing film comprises a metal oxide.
6. The method of claim 4 , wherein the converting further comprises, after exposing the first metal layer to the oxygen-containing environment, exposing the oxygen-containing film to an inert gas.
7. The method of claim 6 , wherein the inert gas comprises N2, He, or Ar.
8. The method of claim 6 , wherein the exposing the oxygen-containing film to an inert environment is performed at a temperature of about 200° C. to about 800° C.
9. The method of claim 6 , wherein a thickness of the second dielectric layer is between 1 nm and 10 nm.
10. A method of fabricating a semiconductor device, the method comprising:
forming a transistor on a substrate, the transistor having a source/drain region;
forming a first dielectric layer over the source/drain region;
forming an opening in the first dielectric layer, at least a portion of the source/drain region being exposed in the opening;
forming a conductive oxide layer along a bottom of the opening; and
forming a first metal layer over the oxide layer, wherein the conductive oxide layer is interposed between the source/drain region and the first metal layer.
11. The method of claim 10 , wherein the forming the conductive oxide layer comprises:
forming a conductive layer along the bottom of the opening; and
converting the conductive layer to the oxide layer.
12. The method of claim 11 , wherein the conductive layer is a metal layer.
13. The method of claim 11 , wherein the converting comprises:
forming an oxygen-containing film over the conductive layer; and
exposing the oxygen-containing film to an inert environment.
14. The method of claim 13 , wherein the forming the oxygen-containing film over the conductive layer comprises exposing the conductive film to an oxygen-containing environment.
15. A method of fabricating a semiconductor device, the method comprising:
receiving a substrate comprising a major surface and a trench below the major surface;
epi-growing a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate;
forming an inter-layer dielectric (ILD) layer over the strained material;
forming an opening in the ILD layer to expose a portion of the strained material;
forming a first metal layer along sidewalls and a bottom of the opening and extending over the ILD layer;
treating the first metal layer to form a dielectric layer over the strained material; and
forming a second metal layer over the dielectric layer in the opening.
16. The method of claim 15 , wherein the step of treating the first metal layer is performed by exposing a surface of the first metal layer to an oxygen-containing environment to form an oxygen-containing film.
17. The method of claim 16 , wherein the oxygen-containing environment comprising H2O, O2, or O3.
18. The method of claim 16 , wherein the step of treating the first metal layer further comprises:
exposing a surface of the oxygen-containing film to an inert gas after exposing the surface of the first metal layer to an oxygen-containing environment.
19. The method of claim 18 , wherein the inert gas comprises N2, He, or Ar.
20. The method of claim 18 , wherein the step of exposing the surface of the oxygen-containing film to an inert gas is performed at a temperature of about 200° C. to about 800° C.