IP Library Granted Patent US 9,831,063
Granted Patent B2
US 9,831,063 · App. 14/768,758 · Granted Nov 28, 2017

Ion implantation compositions, systems, and methods

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Quick Facts
Patent No.
US 9,831,063
App. No.
14/768,758
Granted
Nov 28, 2017
Kind
B2
Abstract

Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.

Claims (17)

1. A method for implanting selenium, said method comprising

flowing a feedstock gas to an implanter with a co-flow gas that is effective to combat at least one of the ion source failure modes of (i) sputtering of a cathode, (ii) deposition of solids on insulating surfaces, and (iii) solids buildup that causes shorting between two components of differing electric potential, and (iv) solids buildup on the cathode, wherein the feedstock gas comprises an organoselenium compound that is isotopically enriched above natural abundance in at least one selenium isotope, said organoselenium compound is of the formula R′SeR″ wherein each R can comprise hydrogen, halide, alkyl, alkoxy, or nitrogen-containing functionality and wherein the organoselenium compound isotopically enriched above natural abundance of at least one selenium isotope of 74 Se, 76 Se, 77 Se, 78 Se, 80 Se, and 82 Se.

2. The method of claim 1 , wherein the feedstock gas is flowed to the implanter in mixture with the co-flow gas, or the feedstock gas and the co-flow gas are flowed to the implanter in separate gas flow conduits.

3. The method of claim 1 , wherein the co-flow gas comprises at least one gas species selected from the group consisting of H 2 , PH 3 , AsH 3 , CH 4 , GeH 4 , SiH 4 , H 2 Se, NH 3 , F 2 , XeF 2 , BF 3 , SF 6 , GeF 4 , SiF 4 , SeF 4 , SeF 6 , NF 3 , N 2 F 4 , HF, WF 6 , MoF 6 , Ar, Ne, Kr, Xe, He, Na, O 2 , O 3 , H 2 O 2 , H 2 O, Cl 2 , HCl, COF 2 , CH 2 O, C 2 F 4 H 2 , PF 3 , PF 5 , CF 4 , CF 3 H, CF 2 H 2 , CFH 3 , B 2 F 4 , CO, CO 2 , compounds of the formula X y F z wherein X is any element in stoichiometric ratio with F, y≧1, and z≧1, noble gases, gaseous compounds of the formula C a O x H y F z wherein a≧0, x≧0, y≧0 and z≧1, gaseous compounds of the formula C x F y H z wherein x≧0, y≧0, and z≧0, and fluorine-containing gases.

4. The method of claim 1 , wherein the feedstock gas and co-flow gas comprise a gas combination that is isotopically enriched above natural abundance in at least one selenium isotope, said gas combination selected from the group consisting of:

H 2 Se+CH 4

H 2 Se+CO

H 2 Se+COF 2

H 2 Se+COF 2 +O 2 +H 2

H 2 Se+SeF 4

H 2 Se+SeF 6

H 2 Se+NF 3

H 2 Se+F 2 .

5. A feedstock gas composition comprising an organoselenium compound and a co-flow gas, the organoselenium compounds has the formula R′SeR″, wherein each of R′ and R″ independently can comprise hydrogen, halide, alkyl, alkoxy, or nitrogen-containing functionality and wherein the organoselenium compound isotopically enriched above natural abundance of at least one selenium isotope of 74 Se, 76 Se, 77 Se, 78 Se, 80 Se, and 82 Se.

6. The feedstock gas composition of claim 5 wherein each R is independently H or C 1 -C 12 alkyl and at least one R is C 1 -C 12 alkyl.

7. The feedstock gas composition of claim 5 , wherein the organoselenium dopant species and a co-flow gas are co-mixed in the storage and dispensing vessel.

8. The feedstock gas composition of claim 5 , wherein the co-flow gas comprises at least one gas species selected from the group consisting of H 2 , PH 3 , AsH 3 , CH 4 , GeH 4 , SiH 4 , H 2 Se, NH 3 , F 2 , XeF 2 , BF 3 , SF 6 , GeF 4 , SiF 4 , SeF 4 , SeF 6 , NF 3 , N 2 F 4 , HF, WF 6 , MoF 6 , Ar, Ne, Kr, Xe, He, Na, O 2 , O 3 , H 2 O 2 , H 2 O, Cl 2 , HCl, COF 2 , CH 2 O, C 2 F 4 H 2 , PF 3 , PF 5 , CF 4 , CF 3 H, CF 2 H 2 , CFH 3 , B 2 F 4 , CO, CO 2 , compounds of the formula X y F z wherein X is any element in stoichiometric ratio with F, y≧1, and z≧1, noble gases, gaseous compounds of the formula C a O x H y F z wherein a≧0, x≧0, y≧0 and z≧1, gaseous compounds of the formula C x F y H z wherein x≧0, y≧0, and z≧0, and fluorine-containing gases.

Assignments (3)
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
ASSIGNMENT OF PATENT SECURITY INTEREST RECORDED AT REEL/FRAME 048811/0679 Recorded Nov 5, 2019
From: GOLDMAN SACHS BANK USA
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 050965/0035 →
SECURITY INTEREST Recorded Nov 13, 2018
From: ENTEGRIS, INC.; SAES PURE GAS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 048811/0679 →