Composition for forming fine resist pattern, and pattern formation method using same
View Patent ↗The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern.
1. A fine pattern-forming composition used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition,
consisting essentially of
a polymer comprising a repeating unit having an amino group, wherein said amino group is a primary amino group or a secondary amino group,
a solvent,
an acid selected from the group consisting of sulfonic acid, carboxylic acid, sulfuric acid, nitric acid, and mixtures thereof, wherein said acid is present in an amount from 2.5 to 30 weight % based on the total weight of said polymer, and
an optional component selected from the group consisting of a surfactant, a germicide, an antibacterial agent, an antiseptic agent, an anti-mold agent and mixtures thereof.
2. The composition according to claim 1 , wherein said repeating unit is one selected from the group consisting of allylamine unit, diallylamine unit, and ethyleneimine unit.
3. The composition according to claim 2 , which has a pH value in the range of 2 to 11 inclusive.
4. The composition according to claim 1 , wherein said polymer is one selected from the group consisting of polyvinylamine, polyallylamine, polydiallylamine, polyethyleneimine, and poly(allylamine-co-diallylamine).
5. The composition according to claim 4 , which has a pH value in the range of 2 to 11 inclusive.
6. The composition according to claim 1 , wherein said acid is a sulfonic acid selected from the group consisting of methanesulfonic acid, ethanesulfonic acid, 2-aminomethanesulfonic acid, trifluoromethanesulfonic acid, p-toluenesulfonic acid, and 10-camphorsulfonic acid.
7. The composition according to claim 6 , which has a pH value in the range of 2 to 11 inclusive.
8. The composition according to claim 6 , wherein the acid is selected from the group consisting of pentafluoropropionic acid, sulfuric acid, trifluoromethanesulfonic acid, p-toluenesulfonic acid and mixtures thereof.
9. The composition according to claim 1 , wherein said acid is a carboxylic acid selected from the group consisting of acetic acid, methoxyacetic acid, glycolic acid, glutaric acid, and malic acid.
10. The composition according to claim 1 , which has a pH value in the range of 2 to 11 inclusive.
11. The composition according to claim 1 , wherein said solvent contains water.
12. The composition according to claim 1 , which further contains a surfactant.
13. The composition according to claim 1 , wherein the optional component selected from the group consisting of a surfactant, a germicide, an antibacterial agent, an antiseptic agent, an anti-mold agent and mixtures thereof is present in an amount of 1% or less based on the total weight of the composition.
14. A method for forming a positive resist pattern, comprising the steps of
coating a semiconductor substrate with a chemically amplified photoresist composition, to form a photoresist layer;
exposing to light said semiconductor substrate coated with said photoresist layer;
developing said photoresist layer with a developer after said exposing step, to form a photoresist pattern;
coating said photoresist pattern with a fine pattern-forming composition consisting essentially of a polymer comprising a repeating unit having an amino group, wherein said amino group is a primary amino group or a secondary amino group, a solvent, an acid selected from the group consisting of sulfonic acid, carboxylic acid, sulfuric acid, nitric acid, and mixtures thereof, wherein said acid is present in an amount from 2.5 to 30 weight % based on the total weight of said polymer, and an optional component selected from the group consisting of a surfactant, a germicide, an antibacterial agent, an antiseptic agent, an anti-mold agent and mixtures thereof;
heating the coated photoresist pattern, and
washing to remove excess of the fine pattern-forming composition.
15. The method according to claim 14 for forming a positive resist pattern, wherein said photoresist composition further contains a photo acid-generating agent.
16. A method for manufacturing semiconductors, comprising the steps of
coating a semiconductor substrate with a chemically amplified photoresist composition, to form a photoresist layer;
exposing to light said semiconductor substrate coated with said photoresist layer;
developing said photoresist layer with a developer after said exposing step, to form a photoresist pattern;
coating said photoresist pattern with a fine pattern-forming composition consisting essentially of a polymer comprising a repeating unit having an amino group, wherein said amino group is a primary amino group or a secondary amino group, a solvent, an acid selected from the group consisting of sulfonic acid, carboxylic acid, sulfuric acid, nitric acid, and mixtures thereof, wherein said acid is present in an amount from 2.5 to 30 weight % based on the total weight of said polymer, and an optional component selected from the group consisting of a surfactant, a germicide, an antibacterial agent, an antiseptic agent, an anti-mold agent and mixtures thereof;
heating the coated photoresist pattern, and
washing to remove excess of the fine pattern-forming composition.