Plasma processing apparatus
A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.
1. A plasma processing apparatus, comprising:
a processing chamber in which plasma processing of a sample is carried out by using plasma;
a radio frequency power source which supplies a radio frequency power for generating the plasma;
a sample stage in which a first electrode and a second electrode which electrostatically chuck the sample are arranged and on which the sample is mounted;
a DC power source which applies a first DC voltage and a second DC voltage to the first and second electrodes, the first DC voltage being a positive DC voltage value, and the second DC voltage being a negative DC voltage value; and
a controller configured to:
control the DC power source to apply a predetermined positive output voltage value to the first electrode during a plasma discharging period, and to apply a predetermined negative output voltage value to the second electrode during the plasma discharging period;
control the DC power source to apply the first DC voltage to the first electrode to cause the first DC voltage to be a higher voltage than the predetermined positive output voltage value during a stepped-up voltage time period; and
control the DC power source to apply the second DC voltage to the second electrode to cause the second DC voltage to be a higher voltage than the predetermined negative output voltage value during the stepped-up voltage time period such that the first DC voltage value and the second DC voltage value act in cooperation to reduce an electric potential difference between an electric potential of the sample and an electric potential present at an inner wall surface of the processing chamber during the stepped-up voltage time period which occurs within a discharge interruption time period, the discharge interruption time period occurring between two or more plasma discharging periods,
wherein the radio frequency power source does not output the radio frequency power during the discharge interruption time period,
wherein the first DC voltage value and the second DC voltage value are obtained based on a resistance value between the sample and the first electrode and a resistance value between the sample and the second electrode,
wherein the resistance value between the sample and the first electrode is different from the resistance value between the sample and the second electrode, and
wherein the stepped-up voltage time period is shorter than the discharge interruption time period, and begins after the start of the discharge interruption time period and ends before the end of the discharge interruption time period.
2. The plasma processing apparatus according to claim 1 ,
wherein the DC power source is provided with a first DC power source and a second DC power source.
3. The plasma processing apparatus according to claim 1 ,
wherein the electric potential of the sample ranges from −10 V to +10 V.
4. A plasma processing apparatus, comprising:
a processing chamber in which plasma processing of a sample is carried out by using plasma;
a radio frequency power source which supplies a radio frequency power for generating the plasma;
a sample stage in which an electrode which electrostatically chucks the sample is arranged and on which the sample is mounted;
a DC power source which applies DC voltage to the electrode; and
a controller configured to:
control the DC power source to apply a predetermined output voltage to the electrode during a plasma discharging period;
control the DC power source to apply a DC voltage to the electrode which is a higher voltage than the predetermined output voltage during a stepped-up voltage time period, the DC voltage having a voltage value which reduces an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the processing chamber during the stepped-up voltage time period which occurs within a discharge interruption time period, the discharge interruption time period occurring between two or more plasma discharging periods; and
control the DC power source to apply the predetermined output voltage to the electrode after the discharge interruption time period,
wherein the radio frequency power source does not output the radio frequency power during the discharge interruption time period; and
wherein the stepped-up voltage time period is shorter than the discharge interruption time period, and begins after the start of the discharge interruption time period and ends before the end of the discharge interruption time period.
5. The plasma processing apparatus according to claim 4 ,
wherein the electric potential difference between the electric potential of the sample and the electric potential of the inner wall of the processing chamber ranges from −10 V to +10 V.
6. A plasma processing apparatus, comprising:
a processing chamber in which plasma processing of a sample is carried out by using plasma;
a radio frequency power source which supplies a radio frequency power for generating the plasma;
a sample stage in which a first electrode and a second electrode which electrostatically chuck the sample are arranged and on which the sample is mounted;
a DC power source which applies a first DC voltage and a second DC voltage to the first and second electrodes, the first DC voltage being a positive DC voltage value, and the second DC voltage being a negative DC voltage value; and
a controller configured to:
control the DC power source to apply a predetermined positive output voltage value to the first electrode during a plasma discharging period, and to apply a predetermined negative output voltage value to the second electrode during the plasma discharging period;
control the DC power source to apply the first DC voltage to the first electrode to cause the first DC voltage to be a higher voltage than the predetermined positive output voltage value during a stepped-up voltage time period;
control the DC power source to apply the second DC voltage to the second electrode to cause the second DC voltage to be a higher voltage than the predetermined negative output voltage value during the stepped-up voltage time period such that the first DC voltage value and the second DC voltage value act in cooperation to reduce an electric potential difference between an electric potential of the sample and an electric potential present at an inner wall surface of the processing chamber during the stepped-up voltage time period which occurs within a discharge interruption time period, the discharge interruption time period occurring between two or more plasma discharging periods, wherein the radio frequency power source does not output radio frequency power during the discharge interruption time period; and
control the DC power source to apply the predetermined positive output voltage value to the first electrode and to apply the predetermined negative output voltage value to the second electrode after the discharge interruption time period.
7. The plasma processing apparatus according to claim 6 ,
wherein the electric potential of the inner wall of the processing chamber is 0 V.